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PDF BFG19 Data sheet ( Hoja de datos )
| Número de pieza | BFG19 | |
| Descripción | NPN Silicon RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFG19 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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NPN Silicon RF Transistor
For low noise, low distortion broadband
amplifiers in antenna and
telecommunication systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
BFG 19S
4
3
2
1 VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFG 19S
Marking
BFG19S
Pin Configuration
1=E 2=B 3=E 4=C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS 75 °C 1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
15
20
20
3
100
12
1
150
-65 ... 150
-65 ... 150
75
Unit
V
mA
W
°C
K/W
1TS is measured on the collector lead at the soldering point to the pcb
1
Oct-26-1999
1 page  
BFG 19S
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
2.6
pF
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.00
4
8
12
16 V
22
VCB
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
14
10V
5V
dB 3V
2V
10
Transition frequency fT = f (IC)
VCE = Parameter
6.0
GHz
5.0
4.5
5V
3V
2V
4.0
3.5
3.0
2.5 1V
2.0
1.5 0.7V
1.00 20 40 60 80 mA 120
IC
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
10
dB 10V
5V
3V
6 2V
84
1V 1V
62
4
0.7V
20 20 40 60 80 mA 120
IC
5
0 0.7V
-20 20 40 60 80 mA 120
IC
Oct-26-1999
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFG19.PDF ] | |
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