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PDF BFG505 Data sheet ( Hoja de datos )

Número de pieza BFG505
Descripción NPN 9 GHz wideband transistors
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! BFG505 Hoja de datos, Descripción, Manual

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D071
BFG505; BFG505/X
NPN 9 GHz wideband transistors
Product specification
Supersedes data of September 1995
1998 Oct 02

1 page




BFG505 pdf
Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505; BFG505/X
250
handbook, halfpage
hFE
200
MRA639
150
100
50
0
103
102
101
1
10 102
IC (mA)
VCE = 6 V.
Fig.3 DC current gain as a function of collector
current.
0.4
handbook, halfpage
Cre
(pF)
0.3
MRA640
0.2
0.1
0
02
46
8 10
VCB (V)
IC = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
handbook,1h2alfpage
fT
(GHz)
8
MRA641
VCE = 6 V
VCE = 3 V
4
0
101
1
10 102
IC (mA)
Tamb = 25 °C; f = 1 GHz.
Fig.5 Transition frequency as a function of
collector current.
1998 Oct 02
25
handbook, halfpage
gain
(dB)
20
GUM
MSG
15
10
5
MRA642
0
0 4 8 12
IC (mA)
VCE = 6 V; f = 900 MHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
Fig.6 Gain as a function of collector current.
5

5 Page





BFG505 arduino
Philips Semiconductors
NPN 9 GHz wideband transistors
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
DB
Product specification
BFG505; BFG505/X
SOT143B
E AX
y
e
4
1
b1
e1
vM A
HE
bp w M B
3
2
A
A1
Q
c
Lp
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
b1
c
D
E
e e1 HE Lp Q
vw
y
mm
1.1
0.9
0.1
0.48 0.88
0.38 0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9 1.7
2.5 0.45 0.55
2.1 0.15 0.45
0.2
0.1
0.1
OUTLINE
VERSION
SOT143B
1998 Oct 02
IEC
REFERENCES
JEDEC
EIAJ
11
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28

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