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PDF BFG541 Data sheet ( Hoja de datos )

Número de pieza BFG541
Descripción NPN 9 GHz wideband transistor
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! BFG541 Hoja de datos, Descripción, Manual

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG541
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995

1 page




BFG541 pdf
Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG541
1000
handbook, halfpage
Ptot
(mW)
800
600
400
200
MRA654 - 1
0
0 50 100 150 200
Ts (o C)
VCE 10 V.
Fig.2 Power derating curve.
250
handbook, halfpage
hFE
200
MRA655
150
100
50
0
102
101
1
10 102
IC (mA)
VCE = 8 V; Tj = 25 °C.
Fig.3 DC current gain as a function of collector
current.
1.0
handbook, halfpage
Cre
(pF)
0.8
MRA656
0.6
0.4
0.2
0
04
IC = 0; f = 1 MHz.
8 12
VCB (V)
Fig.4 Feedback capacitance as a function of
collector-base voltage.
September 1995
12
handbook, halfpage
fT
(GHz)
8
MRA657
VCE = 8 V
4V
4
0
101
1
f = 1 GHz; Tamb = 25 °C.
10 102
IC (mA)
Fig.5 Transition frequency as a function of
collector current.
5

5 Page





BFG541 arduino
Philips Semiconductors
NPN 9 GHz wideband transistor
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
Product specification
BFG541
SOT223
DB
E AX
y
b1
4
c
HE
vM A
1 23
e1 bp
e
wM B
A1
Q
A
detail X
Lp
0 2 4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 bp b1
c
D
E
e
e1 HE Lp
Q
v
w
y
mm
1.8 0.10 0.80 3.1 0.32 6.7
1.5 0.01 0.60 2.9 0.22 6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1 0.95
0.7 0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
September 1995
IEC
REFERENCES
JEDEC
EIAJ
11
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11
97-02-28

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