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BFG92A fiches techniques PDF

Vishay Telefunken - Silicon NPN Planar RF Transistor

Numéro de référence BFG92A
Description Silicon NPN Planar RF Transistor
Fabricant Vishay Telefunken 
Logo Vishay Telefunken 





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BFG92A fiche technique
Silicon NPN Planar RF Transistor
BFG92A
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Features
D High power gain
D Low noise figure
D High transition frequency
21
94 9279
13 579
34
BFG92A Marking: P8
Plastic case (SOT 143)
1 = Collector, 2 = Base, 3 = Emitter, 4 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb 60 °C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
20
15
2
30
200
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthJA
Value
450
Unit
K/W
Document Number 85075
Rev. 1, 11-Nov-99
www.vishay.de FaxBack +1-408-970-5600
1 (4)

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