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Siemens Semiconductor Group - NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)

Numéro de référence BFN18
Description NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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BFN18 fiche technique
NPN Silicon High-Voltage Transistors
q Suitable for video output stages in TV sets
and switching power supplies
q High breakdown voltage
q Low collector-emitter saturation voltage
q Complementary types: BFN 17, BFN 19 (PNP)
BFN 16
BFN 18
Type
BFN 16
BFN 18
Marking
DD
DE
Ordering Code
(tape and reel)
Q62702-F885
Q62702-F1056
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 130 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Rth JA
Rth JS
Pin Configuration
123
BCE
Package1)
SOT-89
Values
BFN 16 BFN 18
250 300
250 300
5
200
500
100
200
1
150
– 65 … + 150
Unit
V
mA
W
˚C
75 K/W
20
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91

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