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Número de pieza | BFN22 | |
Descripción | Surface mount Si-Epitaxial PlanarTransistors | |
Fabricantes | Diotec Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFN22 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! BFN 22
NPN
High Voltage Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Collector-Emitter-voltage
Emitter-Base-voltage
RBE = 2.7 kS
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
VCE0
VCB0
VCER
VEB0
Ptot
IC
ICM
Tj
TS
Grenzwerte (TA = 25/C)
BFN 22
250 V
250 V
250 V
5V
250 mW 1)
50 mA
100 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 200 V
IE = 0, VCB = 200 V, Tj = 150/C
Emitter-Base cutoff current – Emitterreststrom
ICB0
ICB0
IC = 0, VEB = 5 V
IEB0
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IC = 10 mA, IB = 1 mA
VCEsat
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 100 nA
– – 20 :A
– – 100 nA
– – 500 mV
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
6 01.11.2003
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet BFN22.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFN20 | NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) | Siemens Semiconductor Group |
BFN21 | PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) | Siemens Semiconductor Group |
BFN22 | NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) | Siemens Semiconductor Group |
BFN22 | Surface mount Si-Epitaxial PlanarTransistors | Diotec Semiconductor |
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