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Infineon Technologies AG - NPN Silicon High-Voltage Transistors

Numéro de référence BFN26
Description NPN Silicon High-Voltage Transistors
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BFN26 fiche technique
NPN Silicon High-Voltage Transistors
 Suitable for video output stages in TV sets and
switching power supplies
 High breakdown voltage
 Low collector-emitter saturation voltage
 Complementary types: BFN25, BFN27 (PNP)
BFN24, BFN26
3
2
1 VPS05161
Type
BFN24
BFN26
Marking
FHs
FJs
1=B
1=B
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 74 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Pin Configuration
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BFN24 BFN26
250 300
250 300
55
200
500
100
200
360
150
-65 ... 150
Unit
V
mA
mW
°C
RthJS
210
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Nov-30-2001

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