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Siemens Semiconductor Group - NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)

Numéro de référence BFN36
Description NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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BFN36 fiche technique
NPN Silicon High-Voltage Transistors
q Suitable for video output stages in TV sets
and switching power supplies
q High breakdown voltage
q Low collector-emitter saturation voltage
q Complementary types: BFN 37, BFN 39 (PNP)
BFN 36
BFN 38
Type
Marking
BFN 36
BFN 38
BFN 36
BFN 38
Maximum Ratings
Parameter
Ordering Code
(tape and reel)
Q62702-F1246
Q62702-F1303
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 124 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Rth JA
Rth JS
Pin Configuration
1234
BCEC
Package1)
SOT-223
Values
BFN 36 BFN 38
250 300
250 300
5
200
500
100
200
1.5
150
– 65 … + 150
Unit
V
mA
W
˚C
72 K/W
17
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91

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