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PDF BFP180W Data sheet ( Hoja de datos )
| Número de pieza | BFP180W | |
| Descripción | NPN Silicon RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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NPN Silicon RF Transistor
For low-power amplifier in mobile
communication systems (pager) at collector
currents from 0.2 mA to 2.5 mA
fT = 7 GHz
F = 2.1 dB at 900 MHz
BFP 180W
3
4
2
1 VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP 180W
RDs 1 = E 2 = C 3 = E 4 = B SOT-343
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS 126°C 1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
8
10
10
2
4
0.5
30
150
-65 ... 150
-65 ... 150
785
Unit
V
mA
mW
°C
K/W
1TS is measured on the collector lead at the soldering point to the pcb
1
Oct-12-1999
1 page  
BFP 180W
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
35
mW
25
20
TS
TA
15
10
5
00 20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
10 3
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 1
K/W
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
D=0
0.005
0.01
0.02
- 0.05
0.1
0.2
0.5
10
2
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
5
10
0
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
Oct-12-1999
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFP180W.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| BFP180 | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |  Siemens Semiconductor Group |
| BFP180W | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) | Siemens Semiconductor Group |
| BFP180W | NPN Silicon RF Transistor | Infineon Technologies AG |
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