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PDF BFP181R Data sheet ( Hoja de datos )
| Número de pieza | BFP181R | |
| Descripción | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 0.5mA to 12mA
• fT = 8GHz
F = 1.45dB at 900MHz
BFP 181R
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFP 181R RFs
Q62702-F1685
1=E 2=C 3=E 4=B
Package
SOT-143R
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 75 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
20
2
175
150
- 65 ... + 150
- 65 ... + 150
≤ 430
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Jan-21-1997
1 page  
BFP 181R
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
200
mW
Ptot 160
140
TS
120
100
80 TA
60
40
20
0
0 20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3 10 2
RthJS K/W
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
Ptotmax/Ptot-DC
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.1
0.5
10 1
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Semiconductor Group
5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFP181R.PDF ] | |
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