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PDF BFP181R Data sheet ( Hoja de datos )

Número de pieza BFP181R
Descripción NPN Silicon RF Transistor
Fabricantes Infineon Technologies AG 
Logotipo Infineon Technologies AG Logotipo



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No Preview Available ! BFP181R Hoja de datos, Descripción, Manual

NPN Silicon RF Transistor
 For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
 fT = 8 GHz
F = 1.45 dB at 900 MHz
BFP181R
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP181R
Marking
RFs
Pin Configuration
1=E 2=C 3=E 4=B
Package
SOT143R
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS  75 °C 1)
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
12
20
20
2
20
2
175
150
-65 ... 150
-65 ... 150
V
mA
mW
°C
Thermal Resistance
Junction - soldering point 2)
RthJS
 430
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Jun-21-2001

1 page




BFP181R pdf
BFP181R
Total power dissipation Ptot = f (TS)
200
mW
160
140
120
100
80
60
40
20
00 20 40 60 80 100 120 °C 150
TS
Permissible Pulse Load RthJS = f (tp)
10 3
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 2
K/W
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
-
D=0
0.005
0.01
0.02
10 1 0.05
0.1
0.1
0.5
10
1
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
10
0
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
5 Jun-21-2001

5 Page










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