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PDF BFP183W Data sheet ( Hoja de datos )
| Número de pieza | BFP183W | |
| Descripción | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
• fT = 8 GHz
F = 1.2 dB at 900 MHz
BFP 183W
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFP 183W RHs
Q62702-F1503
1=E 2=C 3=E 4=B
Package
SOT-343
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 58 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
65
5
450
150
- 65 ... + 150
- 65 ... + 150
≤ 205
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-12-1996
1 page  
BFP 183W
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
500
mW
Ptot 400
350
TS
300
250
200
TA
150
100
50
0
0 20 40 60 80 100 120 °C 150
TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3 10 2
RthJS K/W
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
Ptotmax/Ptot-DC
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Semiconductor Group
5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Dec-12-1996
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFP183W.PDF ] | |
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