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PDF BFP196W Data sheet ( Hoja de datos )
| Número de pieza | BFP196W | |
| Descripción | NPN Silicon RF Transistor(For low noise/ low distortion broadband amplifiers in antenna and telecommunications) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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BFP 196W
NPN Silicon RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5GHz at collector currents from
20mA to 80mA
• Power amplifier for DECT and PCN systems
• fT = 7.5GHz
F = 1.5 dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFP 196W RIs
Q62702-F1576
1=E 2=C 3=E 4=B
Package
SOT-343
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 69 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
100
12
700
150
- 65 ... + 150
- 65 ... + 150
≤ 115
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-12-1996
1 page  
BFP 196W
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
800
mW
Ptot
600
500
TS
400
300
TA
200
100
0
0 20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
K/W
RthJS
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 2
Ptotmax/Ptot-DC
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Semiconductor Group
5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Dec-12-1996
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFP196W.PDF ] | |
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