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Infineon Technologies AG - Low Noise Silicon Bipolar RF Transistor

Numéro de référence BFP196W
Description Low Noise Silicon Bipolar RF Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BFP196W fiche technique
Low Noise Silicon Bipolar RF Transistor
For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
Power amplifier for DECT and PCN systems
fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz
Pb-free (RoHS compliant) and halogen-free package
with visible leads
Qualification report according to AEC-Q101 available
BFP196W
3
4
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP196W
Marking
Pin Configuration
RIs 1 = E 2 = C 3 = E 4 = B -
-
Package
SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 69°C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TA
TStg
Value
12
20
20
2
150
15
700
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
115 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
1 2014-04-04

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