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Numéro de référence | BFP196W | ||
Description | Low Noise Silicon Bipolar RF Transistor | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
Low Noise Silicon Bipolar RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
• Power amplifier for DECT and PCN systems
• fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
BFP196W
3
4
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP196W
Marking
Pin Configuration
RIs 1 = E 2 = C 3 = E 4 = B -
-
Package
SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 69°C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TA
TStg
Value
12
20
20
2
150
15
700
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
115 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
1 2014-04-04
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Pages | Pages 6 | ||
Télécharger | [ BFP196W ] |
No | Description détaillée | Fabricant |
BFP196 | NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna and telecommunications) | Siemens Semiconductor Group |
BFP196 | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
BFP196W | NPN Silicon RF Transistor(For low noise/ low distortion broadband amplifiers in antenna and telecommunications) | Siemens Semiconductor Group |
BFP196W | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
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