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PDF BFP420 Data sheet ( Hoja de datos )
| Número de pieza | BFP420 | |
| Descripción | NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFP420 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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NPN Silicon RF Transistor
• For high gain low noise amplifiers
• For oscillators up to 10 GHz
• Noise figure F = 1.05 dB at 1.8 GHz
outstanding Gms = 20 dB at 1.8 GHz
• Transition frequency fT = 25 GHz
• Gold metalization for high reliability
• SIEGET ® 25 - Line
Siemens Grounded Emitter Transistor
25 GHz fT - Line
SIEGET®25 BFP 420
3
4
2
1 VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
BFP 420 AMs
Q62702-F1591
Pin Configuration
1=B 2=E 3=C
4=E
Package
SOT-343
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS ≤ 107 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
4.5
15
1.5
35
3
160
150
-65 ...+150
-65 ...+150
≤ 270
Unit
V
mA
mW
°C
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
SSeemmicioconndduuctcotor rGGrorouupp
11
Jul1-91948--11919-081
1 page  
BFP 420
For non-linear simulation:
• Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
• If you need simulation of thereverse characteristics, add the diode with the
C’-E’- diode data between collector and emitter.
• Simulation of package is not necessary for frequenties < 100MHz.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Note:
• This transistor is constructed in a common emitter configuration. This feature causes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
C
B
EE
EHA07307
Transistor Schematic Diagram
The common emitter configuration shows the following advantages:
• Higher gain because of lower emitter inductance.
• Power is dissipated via the grounded emitter leads, because the chip is mounted
on copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
The AC characteristics are verified by random sampling.
SSeemmicioconndduuctcotor rGGrorouupp
55
Jul1-91948--11919-081
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BFP420.PDF ] | |
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