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Número de pieza | BCW29 | |
Descripción | Surface mount Si-Epitaxial PlanarTransistors | |
Fabricantes | Diotec Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCW29 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! BCW29, BCW30
BCW29, BCW30
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2006-07-28
2.9 ±0.1
0.4 3
Type
Code
1
2
1.1
1.9
Dimensions - Maße [mm]
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
PNP
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- VCEO
- VCBO
- VEB0
Ptot
- IC
- ICM
- IBM
Tj
TS
Grenzwerte (TA = 25°C)
BCW29
BCW30
32 V
32 V
5V
250 mW 1)
100 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 10 µA
BCW29
BCW30
hFE
hFE
- VCE = 5 V, - IC = 2 mA
BCW29
BCW30
hFE
hFE
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 50 mA, - IB = 2.5 mA
- VCEsat
- VCEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
– 90 –
– 150 –
120 – 260
215 – 500
– 80 mV 300 mV
– 150 mV –
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet BCW29.PDF ] |
Número de pieza | Descripción | Fabricantes |
BCW29 | PNP general purpose transistors | NXP Semiconductors |
BCW29 | Surface mount Si-Epitaxial PlanarTransistors | Diotec Semiconductor |
BCW29 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
BCW29 | PNP General Purpose Transistors | Kexin |
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