DataSheetWiki

AT503 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Power Semiconductors - PHASE CONTROL THYRISTOR

شماره قطعه AT503
شرح مفصل PHASE CONTROL THYRISTOR
تولید کننده Power Semiconductors 
آرم Power Semiconductors 


1 Page

		

No Preview Available !

AT503 شرح
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
gen 03 - ISSUE : 03
AT503
Repetitive voltage up to
Mean on-state current
Surge current
Symbol Characteristic
Conditions
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
V DRM
Repetitive peak off-state voltage
I RRM
Repetitive peak reverse current
V=VRRM
I DRM
Repetitive peak off-state current
V=VDRM
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
I TSM
Surge on-state current
sine wave, 10 ms
I² t I² t
without reverse voltage
V T On-state voltage
On-state current =
800 A
V T(TO)
Threshold voltage
r T On-state slope resistance
SWITCHING
di/dt
Critical rate of rise of on-state current, min.
From 75% VDRM up to 500 A, gate 10V 5ohm
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 70% of VDRM
td Gate controlled delay time, typical
VD=100V, gate source 10V, 10 ohm , tr=.5 µs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 75% VDRM
Q rr Reverse recovery charge
di/dt=-20 A/µs, I= 330A
I rr Peak reverse recovery current
VR= 50 V
I H Holding current, typical
VD=5V, gate open circuit
I L Latching current, typical
VD=5V, tp=30µs
GATE
V GT
Gate trigger voltage
VD=5V
I GT Gate trigger current
VD=5V
V GD
Non-trigger gate voltage, min.
VD=VDRM
V FGM
Peak gate voltage (forward)
I FGM
Peak gate current
V RGM
Peak gate voltage (reverse)
P GM
Peak gate power dissipation
Pulse width 100 µs
P G Average gate power dissipation
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
T j Operating junction temperature
F Mounting force
Mass
ORDERING INFORMATION : AT503 S 16
standard specification
VDRM&VRRM/100
1600 V
445 A
6.4 kA
Tj
[°C]
Value
Unit
125 1600
125 1700
125 1600
125 30
125 30
V
V
V
mA
mA
445 A
355 A
125 6.4
kA
205 x1E3 A²s
25 1.45
V
125 0.9
V
125 0.680
mohm
125 200
125 500
25 1.6
200
125
25 300
25 700
A/µs
V/µs
µs
µs
µC
A
mA
mA
25 3.5
25 200
125 0.25
20
8
5
75
1
V
mA
V
V
A
V
W
W
95
20
-30 / 125
4.9 / 5.9
55
°C/kW
°C/kW
°C
kN
g

قانون اساسیصفحه 4
دانلود [ AT503 دیتاشیت ]



دیتاشیت توصیه

شماره قطعه شرح مفصل تولید کنندگان
AT5020 Multilayer Chip Antenna ACX
ACX
AT503 PHASE CONTROL THYRISTOR Power Semiconductors
Power Semiconductors
AT503S16 PHASE CONTROL THYRISTOR Power Semiconductors
Power Semiconductors
AT505 PHASE CONTROL THYRISTOR Power Semiconductors
Power Semiconductors

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2019   |   تماس با ما  |   جستجو