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PDF AT5FC001 Data sheet ( Hoja de datos )

Número de pieza AT5FC001
Descripción 1-Megabyte Flash Memory PCMCIA Card
Fabricantes ATMEL Corporation 
Logotipo ATMEL Corporation Logotipo



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No Preview Available ! AT5FC001 Hoja de datos, Descripción, Manual

Features
Single Power Supply
Read and Write Voltage, 5 V ± 5%
High Performance
200 ns Maximum Access Time
6 ms Typical Sector Write
CMOS Low Power Consumption
20 mA Typical Active Current (Byte Mode)
400 µA Typical Standby Current
Fully MS-DOS Compatible Flash Driver and Formatter
Virtual-Disk Flash Driver with 256 Bytes/Sector
Random Read/Write to any Sector
No Erase Operation Required Prior to any Write
Zero Data Retention Power
Batteries not Required for Data Storage
PCMCIA/JEIDA 68-Pin Standard
Selectable Byte- or Word-Wide Configuration
High Re-programmable Endurance
Built-in Redundancy for Sector Replacement
Minimum 100,000 Write Cycles
Five Levels of Write Protection
Prevent Accidental Data Loss
Block Diagram
1-Megabyte
Flash Memory
PCMCIA Card
AT5FC001
Pin Configuration
Pin Name
A0-A19
D0-D15
CE1,CE2,
WE, OE, REG
CD, WP
BVD1, BVD2
Function
Addresses
Data
Control Signals
Card Status
GND
D3
D4
D5
D6
D7
CE1
A10
OE
A11
A9
A8
A13
A14
WE
NC
VCC
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
D0
D1
D2
WP
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35 GND
3 6 CD1
3 7 D11
3 8 D12
3 9 D13
4 0 D14
4 1 D15
4 2 CE2
4 3 NC
4 4 RFU
4 5 RFU
4 6 A17
4 7 A18
4 8 A19
4 9 NC
5 0 NC
5 1 VCC
5 2 NC
5 3 NC
5 4 NC
5 5 NC
5 6 NC
5 7 NC
5 8 NC
5 9 NC
6 0 NC
6 1 REG
6 2 BVD2
6 3 BVD1
6 4 D8
6 5 D9
6 6 D10
6 7 CD2
6 8 GND

1 page




AT5FC001 pdf
AT5FC001
Pin Description
Symbol
Name
A0-A19
Address Inputs
D0-D15
Data Input/Output
CE1, CE2
Card Enable
OE Output Enable
WE Write Enable
VCC
GND
CD1, CD2
PC Card Power
Supply
Ground
Card Detect
WP Write Protect
NC
BVD1, BVD2
No Connect
Battery Voltage Detect
REG
Register Select
Type
Function
Input
Address Inputs are internally latched during write cycles.
Input/Output
Data Input/Outputs are internally latched on write cycles.
Data outputs are latched during read cycles. Data pins
are active high. When the memory card is de-selected or
the outputs are disabled the outputs float to tri-state.
Input
Card Enable is active low. The memory card is
de-selected and power consumption is reduced to
standby levels when CE is high. CE activates the internal
memory card circuitry that controls the high and low byte
control logic of the card, input buffers, segment decoders,
and associated memory devices.
Input
Output Enable is active low and enables the data buffers
through the card outputs during read cycles.
Input
Write Enable is active low and controls the write function
to the memory array. The target address is latched on the
falling edge of the WE pulse and the appropriate data is
latched on the rising edge of the pulse.
PC Card Power Supply for device operation
(5.0 V ± 5%)
Ground
Output
When Card Detect 1 and 2 = Ground the system detects
the card.
Output
Write Protect is active high and indicates that all card
write operations are disabled by the write protect switch.
Corresponding pin is not connected internally.
Output
Internally pulled up. (There is no battery in the card.)
Input
Provide access to Card Information Structure in the
Attribute Memory Device
5

5 Page





AT5FC001 arduino
Write Cycle Characteristics
Symbol
tWC
tAS
tAH
tDS
tDH
tWP
tBLC
tWPH
Parameter
Write Cycle Time
Address Set-up Time
Address Hold Time
Data Set-up Time
Data Hold Time
Write Pulse Width
Byte Load Cycle Time
Write Pulse Width High
Min
10
60
60
10
100
100
AT5FC001
Max Units
10 ms
ns
ns
ns
ns
ns
150 µs
ns
A.C. Write Waveforms (Byte Mode)
OE
CE2
CE1
WE
tAS
A0
A1-A7
A8-A19
DATA
tWP
tAH
BYTE
ADDRESS
SECTOR
ADDRESS
tDS
BYTE 0
BYTE 1
tWPH
tBLC
tDH
BYTE 2
tWC
BYTE 254
BYTE 255
Notes:
1. A18 and A19 specify the pair of AT29C010A devices to be
written, while A0 controls the selection of even and odd bytes.
A0, A18 and A19 must be valid throughout the entire WE low
pulse.
2. A8 through A17 must specify the sector address during each high
to low transition of WE (or CE).
3. OE must be high when WE and CE are both low.
4. All bytes that are not loaded within the sector being pro-
grammed will be indeterminate.
11

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