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PDF AT41533 Data sheet ( Hoja de datos )
| Número de pieza | AT41533 | |
| Descripción | General Purpose/ Low Noise NPN Silicon Bipolar Transistor | |
| Fabricantes | Agilent(Hewlett-Packard) | |
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General Purpose, Low Noise
NPN␣ Silicon Bipolar Transistor
Technical Data
AT-41511
AT-41533
Features
• General Purpose NPN
Bipolar Transistor
• 900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB GA
AT-41533: 1 dB NF, 14.5 dB GA
• Characterized for 3, 5, and
8 Volt Use
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-and-Reel Packaging
Option Available[1]
Outline Drawing
EMITTER COLLECTOR
415
BASE EMITTER
SOT 143 (AT-41511)
COLLECTOR
415
Description
Hewlett-Packard’s AT-41511 and
AT-41533 are general purpose
NPN bipolar transistors that offer
excellent high frequency
performance at an economical
price. The AT-41533 uses the
3␣ lead SOT-23, while the AT-415 11
places the same die in the lower
parasitic 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 4 micron emitter-to-emitter
pitch of these transistors yields
high performance products that
can perform a multiplicity of
tasks. The 14 emitter finger
interdigitated geometry yields an
intermediate-sized transistor with
easy to match to impedances, low
noise figure, and moderate
power.
Optimized for best performace
from a 5 to 8 volt bias supply,
these transistors are also good
performers at 2.7 V. Applications
include use in wireless systems as
an LNA, gain stage, buffer,
oscillator, or active mixer.
An optimum noise match near
50␣ ohms at 900 MHz makes these
devices particularly easy to use as
LNAs. Typical amplifier designs
at 900 MHz yield 1 dB noise
figures with 15 dB or more
associated gain at a 5 V, 5 mA
bias, with good gain and noise
figure obtainable at biases as low
as 2 mA.
The AT-415 series bipolar
transistors are fabricated using
Hewlett-Packard’s 10 GHz fT Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by
the use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
BASE EMITTER
SOT 23 (AT-41533)
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices.”
5965-8929E
4-134
1 page  
AT-41511 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 25 mA
Freq.
GHz
S11
Mag Ang
dB
S21
Mag
Ang
dB
S12
Mag
Ang
S22
Mag Ang
0.1 0.49
-91 29.26 29.048 136 -37.72 0.013 62
0.5 0.53
-168 18.55
8.459 92 -30.46 0.030 61
0.9 0.53
172 13.62
4.798 79 -26.56 0.047 66
1.0 0.53
169 12.73
4.330 76 -25.68 0.052 67
1.5 0.54 153 9.34
2.932 63 -22.50 0.075 67
1.8 0.55 145 7.86
2.473 57 -21.01 0.089 66
2.0 0.56 140 6.97
2.232 52 -20.09 0.099 66
2.4 0.57 129 5.47
1.877 44 -18.49 0.119 64
3.0 0.60 116 3.67
1.525 32 -16.54 0.149 59
4.0 0.64 95 1.30 1.162 14 -13.98 0.200 51
5.0 0.67 79 -0.58 0.935 -1 -11.90 0.254 43
0.73
0.45
0.42
0.42
0.42
0.42
0.42
0.42
0.41
0.40
0.39
30
MSG
-22
-23
-26
-27
-34
-38
-41
-48
-58
-75
-96
AT-41511 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 25 mA
25
20
Freq
Fmin
Γopt
Rn 15
GHz
0.1
dB Mag Ang
-
1.6 0.13
18 0.16
MAG
10
S21
MSG
0.9 1.9 0.24 -162 0.13
5
1.8 2.3 0.40 -137 0.23
2.4 2.7 0.50 -122 0.35
0
01 2 3 45
FREQUENCY (GHz)
Figure 12. AT-41511 Gains vs.
Frequency at VCE = 2.7 V, IC = 25␣ mA.
AT-41533 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 25 mA
Freq.
GHz
S11
Mag Ang
dB
S21
Mag
Ang
dB
S12
Mag
Ang
S22
Mag Ang
0.1 0.34
-75
29.37
29.404 127 -37.08 0.014
72
0.71
-21
0.5 0.19
-168 17.63
7.614 88 -25.68 0.052 76
0.47
-20
0.9 0.20
161 12.73
4.329 74 -20.82 0.091 74
0.46
-24
1.0 0.20
154 11.84
3.909 71 -19.91 0.101 74
0.45
-26
1.5 0.24 132 8.56 2.679 59 -16.42 0.151 70 0.45 -33
1.8 0.25 121 7.12 2.271 52 -14.85 0.181 67 0.44 -38
2.0 0.27 115 6.32 2.071 47 -13.94 0.201 65 0.44 -41
2.4 0.29 105 4.99 1.777 39 -12.32 0.242 61 0.43 -48
3.0 0.33 93 3.46 1.489 27 -10.31 0.305 54 0.41 -59
4.0 0.39
76
1.69
1.215
11
-7.66
0.414
42
0.37
-81
5.0 0.45
60
0.40
1.047
-3
-5.73
0.517
29
0.33 -106
30
MSG
AT-41533 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 25 mA
Freq
Fmin
Γopt
GHz
dB Mag Ang
0.1
1.3 0.10
24
0.9 1.6 0.25 -158
1.8 1.9 0.48 -122
2.4 2.1 0.59 -101
Rn
-
0.12
0.11
0.19
0.37
4-138
25
20
15
MAG
10
S21
5
MSG
0
01 2 3 45
FREQUENCY (GHz)
Figure 13. AT-41533 Gains vs.
Frequency at VCE = 2.7 V, IC = 25 mA.
5 Page | ||
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| PDF Descargar | [ Datasheet AT41533.PDF ] | |
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