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Numéro de référence | AT49BV001AT-55TI | ||
Description | 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory | ||
Fabricant | ATMEL Corporation | ||
Logo | |||
1 Page
Features
• Single Supply for Read and Write: 2.7 to 3.6V
• Fast Read Access Time – 55 ns
• Internal Program Control and Timer
• Sector Architecture
– One 16K Bytes Boot Block with Programming Lockout
– Two 8K Bytes Parameter Blocks
– Two Main Memory Blocks (32K Bytes, 64K Bytes)
• Fast Erase Cycle Time – 3 Seconds
• Byte-by-Byte Programming – 30 µs/Byte Typical
• Hardware Data Protection
• DATA Polling for End of Program Detection
• Low Power Dissipation
– 15 mA Active Current
– 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49BV001A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory.
Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to
55 ns with power dissipation of just 54 mW over the industrial temperature range.
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
RESET
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
RESET
Data Inputs/Outputs
No Connect
PLCC Top View
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
A11
A9
A8
A13
A14
NC
WE
VCC
*RESET
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
1-megabit
(128K x 8)
Single 2.7-volt
Battery-Voltage™
Flash Memory
AT49BV001A
AT49BV001AN
AT49BV001AT
AT49BV001ANT
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
Note: *This pin is a NC on the AT49BV001AN(T).
Rev. 3364C–FLASH–9/03
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Pages | Pages 18 | ||
Télécharger | [ AT49BV001AT-55TI ] |
No | Description détaillée | Fabricant |
AT49BV001AT-55TI | 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory | ATMEL Corporation |
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