AT49BV512-15VI Datasheet PDF - ATMEL Corporation
| Part Number | AT49BV512-15VI | |
| Description | 512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory | |
| Manufacturers | ATMEL Corporation | |
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Features
• Single Supply Voltage, Range 2.7V to 3.6V
• Single Supply for Read and Write
• Fast Read Access Time - 120 ns
• Internal Program Control and Timer
• 8K bytes Boot Block With Lockout
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 30 µs/Byte typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49BV512 is a 3-volt-only, 512K Flash memories organized as 65,536 words of
8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the
devices offer access times to 120 ns with power dissipation of just 90 mW over the
commercial temperature range. When the devices are deselected, the CMOS standby
current is less than 50 µA.
To allow for simple in-system reprogrammability, the AT49BV512 does not require
high input voltages for programming. Three-volt-only commands determine the read
and programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49BV512 is performed by erasing
the entire 1 megabit of memory and then programming on a byte by byte basis. The
(continued)
Pin Configurations
DIP Top View
Pin Name Function
A0 - A15
Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
NC
NC
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 WE
30 NC
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
A11
A9
A8
A13
A14
NC
WE
VCC
NC
NC
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
PLCC Top View
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
512K (64K x 8)
Single 2.7-volt
Battery-Voltage™
Flash Memory
AT49BV512
Rev. 1026C–09/98
1
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AT49BV512
AC Read Characteristics
Symbol
tACC
tCE (1)
tOE (2)
tDF (3, 4)
tOH
Parameter
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE to Output Float
Output Hold from OE, CE or Address, whichever occurred first
AT49BV512-12
Min Max
120
120
50
0 30
0
AC Read Waveforms(1)(2)(3)(4)
ADDRESS
ADDRESS VALID
AT49BV512-15
Min Max
150
150
0 70
0 40
0
Units
ns
ns
ns
ns
ns
CE
tCE
OE
OUTPUT
tACC
HIGH Z
tOH
OUTPUT VALID
tDF
Notes:
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specified from OE or CE whichever occurs frist (CL - 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
AC 2.4V
DRIVING
LEVELS 0.4V
tR, tF < 5 ns
1.5V
AC
MEASUREMENT
LEVEL
Output Test Load
3.0V
1.8K
1.3K
OUTPUT
PIN
100 pF
Pin Capacitance
f = 1 MHz, T = 25°C(1)
Typ Max
CIN
COUT
Note:
46
8 12
1. This parameter is characterized and is not 100% tested.
Units
pF
pF
Conditions
VIN = 0V
VOUT = 0V
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AT49BV512-15VI electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ AT49BV512-15VI.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| AT49BV512-15VC | The function is 512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory. ATMEL Corporation | |
| AT49BV512-15VI | The function is 512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory. ATMEL Corporation | |
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