AT49LV002-70JI Datasheet PDF - ATMEL Corporation
| Part Number | AT49LV002-70JI | |
| Description | 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory | |
| Manufacturers | ATMEL Corporation | |
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Features
• Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)
• Fast Read Access Time - 70 ns
• Internal Program Control and Timer
• Sector Architecture
– One 16K Byte Boot Block with Programming Lockout
– Two 8K Byte Parameter Blocks
– Two Main Memory Blocks (96K, 128K) Bytes
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 30 µs/Byte Typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49BV/LV002(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory.
Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70
ns with power dissipation of just 90 mW over the commercial temperature range.
When the device is deselected, the CMOS standby current is less than 50 µA. For the
Pin Configurations
Pin Name
A0 - A17
CE
OE
WE
RESET
I/O0 - I/O7
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
RESET
Data Inputs/Outputs
Don’t Connect
PLCC Top View
DIP Top View
(continued)
*RESET
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 WE
30 A17
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
5
6
7
8
9
10
11
12
13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
A11
A9
A8
A13
A14
A17
WE
VCC
*RESET
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
*Note: This pin is a DC on the AT49BV002N(T) and AT49LV002N(T).
2-Megabit
(256K x 8)
Single 2.7-Volt
Battery-Voltage™
Flash Memory
AT49BV002
AT49LV002
AT49BV002N
AT49LV002N
AT49BV002T
AT49LV002T
AT49BV002NT
AT49LV002NT
Rev. 0982C–07/98
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AT49BV/LV002(N)(T)
Command Definition (in Hex)(1)
Command
Sequence
Bus
Cycles
1st Bus
Cycle
Addr Data
2nd Bus
Cycle
Addr Data
3rd Bus
Cycle
Addr Data
4th Bus
Cycle
Addr Data
5th Bus
Cycle
Addr Data
6th Bus
Cycle
Addr Data
Read
Chip Erase
Sector Erase
1 Addr DOUT
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 10
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 SA(4) 30
Byte Program
4 5555 AA 2AAA 55 5555 A0 Addr DIN
Boot Block Lockout(2) 6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 40
Product ID Entry
3 5555 AA 2AAA 55 5555 90
Product ID Exit(3)
3 5555 AA 2AAA 55 5555 F0
Product ID Exit(3)
1 XXXX F0
Notes: 1. The DATA FORMAT in each bus cycle is as follows: I/O7 - I/O0 (Hex)
2. The 16K byte boot sector has the address range 00000H to 03FFFH for the AT49BV/LV002(N) and 3C000H to 3FFFFH for
the AT49BV/LV002(N)T
3. Either one of the Product ID Exit commands can be used.
4. SA = sector addresses:
For the AT49BV/LV002(N):
SA = 00000 to 03FFF for BOOT BLOCK
Nothing will happen and the device goes back to the read mode in 100 ns
SA = 04000 to 05FFF for PARAMETER BLOCK 1
SA = 06000 to 07FFF for PARAMETER BLOCK 2
SA = 08000 to 1FFFF for MAIN MEMORY ARRAY BLOCK 1
This command will erase - PB1, PB2 and MMB1
SA = 20000 to 3FFFF for MAIN MEMORY ARRAY BLOCK 2
For the AT49BV/LV002(N)T:
SA = 3C000 to 3FFFF for BOOT BLOCK
Nothing will happen and the device goes back to the read mode in 100 ns
SA = 3A000 to 3BFFF for PARAMETER BLOCK 1
SA = 38000 to 39FFF for PARAMETER BLOCK 2
SA = 20000 to 37FFF for MAIN MEMORY ARRAY BLOCK 1
This command will erase - PB1, PB2 and MMB1
SA = 00000 to IFFFF for MAIN MEMORY ARRAY BLOCK 2
Absolute Maximum Ratings
Temperature Under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V
*NOTICE:
Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions beyond those indicated in the operational sec-
tions of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect device reliability.
5
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| Information | Total 20 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ AT49LV002-70JI.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| AT49LV002-70JC | The function is 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory. ATMEL Corporation | |
| AT49LV002-70JI | The function is 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory. ATMEL Corporation | |
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