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Advanced Semiconductor - NPN SILICON RF POWER TRANSISTOR

Numéro de référence AJT030
Description NPN SILICON RF POWER TRANSISTOR
Fabricant Advanced Semiconductor 
Logo Advanced Semiconductor 





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AJT030 fiche technique
AJT030
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AJT030 is Designed for
FEATURES:
Input Matching Network
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 3.5 A
VCC
PDISS
TJ
TSTG
θJC
40 V
75 W @ TC 85 OC
-65 OC to +250 OC
-65 OC to +200 OC
2.2 OC/W
PACKAGE STYLE .400 2L FLG
N
B
D
L
J
A
O
E
K
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
C
G
F
H
M
P
MINIMUM
inches / mm
.395 / 10.03
.140 / 3.56
.110 / 2.80
.110 / 2.80
.193 / 4.90
.003 / 0.08
.118 / 3.00
.050 / 1.27
.063 / 1.60
.650 / 16.51
.386 / 9.80
.900 / 22.86
.450 / 11.43
.125 / 3.18
.405 / 10.29
.170 / 4.32
.062 / 1.58
.062 x 45°
Ø.120
I
Q
R
MAXIMUM
inches / mm
.407 / 10.34
.230 / 5.84
.006 / 0.15
.131 / 3.33
ORDER CODE: ASI10546
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 10 mA
BVCER
IC = 20 mA
RBE = 10
BVEBO
IE = 1.0 mA
ICES VCE = 35 V
hFE VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
55
55
3.5
5.0
15 150
UNITS
V
V
V
mA
---
PG
VCC = 50 V POUT = 30 W f = 960 - 1215 MHz
7.8
ηC 40
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

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