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Advanced Semiconductor - NPN SILICON RF POWER TRANSISTOR

Numéro de référence AJT150
Description NPN SILICON RF POWER TRANSISTOR
Fabricant Advanced Semiconductor 
Logo Advanced Semiconductor 





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AJT150 fiche technique
AJT150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AJT150 is Designed for
FEATURES:
Input Matching Network
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 10 A
VCB 60 V
VCE 35 V
PDISS
TJ
TSTG
θJC
140 W
-65 OC to +200 OC
-65 OC to +150 OC
0.57 OC/W
PACKAGE STYLE .400 2L FLG (A)
4x .062 x 45°
A
.040 x 45°
2xB C
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
E
D
G
I
L
H
J
K
MINIMUM
inches / mm
.135 / 3.43
.100 / 2.54
.050 / 1.27
.376 / 9.55
.110 / 2.79
.395 / 10.03
.490 / 12.45
.690 / 17.53
.890 / 22.61
.003 / 0.08
.052 / 1.32
.118 / 3.00
.193 / 4.90
.100 / 2.54
F
2xR
NP
M
MAXIMUM
inches / mm
.145 / 3.68
.120 / 3.05
.396 / 10.06
.130 / 3.30
.407 / 10.34
.510 / 12.95
.710 / 18.03
.910 / 23.11
.006 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
ORDER CODE: ASI10548
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
RBE = 10
BVEBO
IE = 10 mA
ICES VBE = 50 V
hFE VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
60
4.0
5
10 100
UNITS
V
V
V
mA
---
PG
ηC
VCc = 50 V POUT = 150 W
f = 960 - 1215 MHz
7.5
40
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

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