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Microsemi Corporation - Optimized for Radio Frequency Response

Numéro de référence 1N100
Description Optimized for Radio Frequency Response
Fabricant Microsemi Corporation 
Logo Microsemi Corporation 





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1N100 fiche technique
Gold Bonded
1N100A Germanium Diodes
Optimized for Radio Frequency Response
Can be used in many AM, FM and TV-IF applications, replacing point contact devices.
Applications
AM/FM detectors
Ratio detectors
DO-7 Glass Package
FM discriminators
TV audio detectors
0.018-0.022"
0.458-.558 mm
RF input probes
TV video detectors
Features
1.0"
25.4 mm
(Min.)
Length
0.230-0.30"
5.85-7.62mm
Lower leakage current
Flat junction capacitance
High mechanical strength
At least 1 million hours MTBF
BKC's Sigma-Bond™ plating for
problem free solderability
Absolute Maximum Ratings at Tamb = 25 OC unless otherwise specified
Parameter
Symbols
Peak Inverse Voltage
PIV
Peak Forward Surge Current Non-Repetitive, t = 1 Second
Peak Forward Surge Current Repetitive
Average Rectified Forward Current
Operating Temperatures
Storage Temperatures
Electrical Characteristics at Tamb = 25 OC
Parameter
Test Conditions
IFSM
I
FSR
IO
T
J & Op
TJ & STG
Symbols
Forward Voltage Drop IF = 40mA
VF
Dia
0.085-.107 "
2.16-2.71 mm
Min.
--
-78
-78
Max.
100
0.4
250
70
+90
+100
Units
Volts
Amps
mA
mA
OC
OC
Min.
Typ.
Max. Units
1.0 Volts
Reverse Leakage
Reverse Leakage
Breakdown Voltage
VR = 5 Volts
VR = 50 Volts
I = 1.0mA
R
IR
IR
PIV 100
5 µA
50 µA
Volts
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135

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