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1N1186 fiches techniques PDF

Diotec Semiconductor - Silicon-Power Rectifiers

Numéro de référence 1N1186
Description Silicon-Power Rectifiers
Fabricant Diotec Semiconductor 
Logo Diotec Semiconductor 





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1N1186 fiche technique
1N 1183 ... 1N 1190, 1N 3766, 1N 3768
PBY 301 ... PBY 307
Silicon-Power Rectifiers
Silizium-Leistungs-Gleichrichter
13
Ø3.5
Type
SW17
M6
Dimensions / Maße in mm
Nominal current – Nennstrom
35 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50…1000 V
Metal case – Metallgehäuse
DO-5
Weight approx. – Gewicht ca.
6g
Standard polarity:
Cathode to stud / am Gewinde
Index R: Anode to stud / am Gewinde (e.g. 1N 1183 A/R)
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Type
Typ
1N 1183
1N 1184
1N 1186
1N 1188
1N 1190
1N 3766
1N 3768
= PBY 301
= PBY 302
= PBY 303
= PBY 304
= PBY 305
= PBY 306
= PBY 307
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
400
600
800
1000
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
60
120
240
480
720
1000
1200
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100/C
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
TA = 25/C
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
TA = 25/C
Rating for fusing – Grenzlastintegral, t < 10 ms
TA = 25/C
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
IFAV 35 A 1)
IFRM 80 A 1)
IFSM 450 A
IFSM 500 A
i2t 1000 A2s
Tj – 65…+175/C
TS – 65…+175/C
1) Valid, if the temp. of the stud is kept to 100/C – Gültig, wenn die Temp. am Gewinde auf 100/C gehalten wird
06.08.2002
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