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PDF AD812 Data sheet ( Hoja de datos )
| Número de pieza | AD812 | |
| Descripción | Dual/ Current Feedback Low Power Op Amp | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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a
Dual, Current Feedback
Low Power Op Amp
AD812
FEATURES
Two Video Amplifiers in One 8-Lead SOIC Package
Optimized for Driving Cables in Video Systems
Excellent Video Specifications (RL = 150 ⍀):
Gain Flatness 0.1 dB to 40 MHz
0.02% Differential Gain Error
0.02؇ Differential Phase Error
Low Power
Operates on Single +3 V Supply
5.5 mA/Amplifier Max Power Supply Current
High Speed
145 MHz Unity Gain Bandwidth (3 dB)
1600 V/s Slew Rate
Easy to Use
50 mA Output Current
Output Swing to 1 V of Rails (150 ⍀ Load)
APPLICATIONS
Video Line Driver
Professional Cameras
Video Switchers
Special Effects
PRODUCT DESCRIPTION
The AD812 is a low power, single supply, dual video amplifier.
Each of the amplifiers have 50 mA of output current and are
optimized for driving one back-terminated video load (150 Ω)
each. Each amplifier is a current feedback amplifier and fea-
tures gain flatness of 0.1 dB to 40 MHz while offering differen-
tial gain and phase error of 0.02% and 0.02°. This makes the
AD812 ideal for professional video electronics such as cameras
and video switchers.
PIN CONFIGURATION
8-Lead Plastic
Mini-DIP and SOIC
OUT1 1
–IN1 2
+
+IN1 3
V– 4
+
AD812
8 V+
7 OUT2
6 –IN2
5 +IN2
The AD812 offers low power of 4.0 mA per amplifier max (VS =
+5 V) and can run on a single +3 V power supply. The outputs
of each amplifier swing to within one volt of either supply rail to
easily accommodate video signals of 1 V p-p. Also, at gains of
+2 the AD812 can swing 3 V p-p on a single +5 V power sup-
ply. All this is offered in a small 8-lead plastic DIP or 8-lead
SOIC package. These features make this dual amplifier ideal
for portable and battery powered applications where size and
power is critical.
The outstanding bandwidth of 145 MHz along with 1600 V/µs
of slew rate make the AD812 useful in many general purpose
high speed applications where a single +5 V or dual power sup-
plies up to ± 15 V are available. The AD812 is available in the
industrial temperature range of –40°C to +85°C.
0.4
G = +2
0.3 RL = 150⍀
0.2
0.1
0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
100k
VS = ؎15V
؎5V
5V
3V
1M 10M
FREQUENCY – Hz
100M
Figure 1. Fine-Scale Gain Flatness vs. Frequency, Gain
= +2, RL = 150 Ω
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
0.06
DIFFERENTIAL GAIN
0.04
0.08
0.02
0.06
DIFFERENTIAL PHASE
0.04
0.02
0
5 6 7 8 9 10 11 12 13 14 15
SUPPLY VOLTAGE – ؎Volts
Figure 2. Differential Gain and Phase vs. Supply Voltage,
Gain = +2, RL = 150 Ω
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1998
1 page  
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
Internal Power Dissipation2
Plastic (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 Watts
Small Outline (R) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range N, R . . . . . . . . . –65°C to +125°C
Operating Temperature Range . . . . . . . . . . . . –40°C to +85°C
Lead Temperature Range (Soldering, 10 sec) . . . . . . . +300°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air: 8-lead plastic package: θJA = 90°C/Watt;
8-lead SOIC package: θJA = 150°C/Watt.
ORDERING GUIDE
Model
Temperature
Range
Package
Description
Package
Option
AD812AN
AD812AR
–40°C to +85°C
–40°C to +85°C
AD812AR-REEL
AD812AR-REEL7
8-Lead Plastic DIP N-8
8-Lead Plastic SOIC SO-8
13" Reel
7" Reel
AD812
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD812 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for the plastic encap-
sulated parts is determined by the glass transition temperature
of the plastic, about 150°C. Exceeding this limit temporarily
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a
junction temperature of 175°C for an extended period can result
in device failure.
While the AD812 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature (150 degrees) is not exceeded under all conditions. To
ensure proper operation, it is important to observe the derating
curves.
It must also be noted that in high (noninverting) gain configura-
tions (with low values of gain resistor), a high level of input
overdrive can result in a large input error current, which may
result in a significant power dissipation in the input stage. This
power must be included when computing the junction tempera-
ture rise due to total internal power.
2.0
TJ = +150؇C
8-LEAD MINI-DIP PACKAGE
1.5
METALIZATION PHOTO
Dimensions shown in inches and (mm).
0.0783
(1.99)
V+
OUT2
–IN2
8 76
5 +IN2
0.0539
(1.37)
1.0
8-LEAD SOIC PACKAGE
0.5
0
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE – ؇C
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
4 V–
1
OUT1
2
–IN1
3
+IN1
4
V–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD812 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. B
–5–
5 Page 
2V
100
90
50ns
VIN
500mV
100
90
AD812
20ns
VIN
10
0%
2V
VOUT
Figure 34. Large Signal Pulse Response, Gain = –1,
(RF = 750 Ω, RL = 150 Ω, VS = ±5 V)
10
0%
500mV
VOUT
Figure 37. Small Signal Pulse Response, Gain = –1,
(RF = 750 Ω, RL = 150 Ω, VS = ±5 V)
PHASE
VS = ؎15V
؎5V
5V
G = –1
RL = 150⍀
0
–90
1
GAIN
0
3V –180
–270
–1
–2
–3
–4
–5
–6
1
VS = ؎15V
؎5V
5V
3V
10 100
FREQUENCY – MHz
1000
Figure 35. Closed-Loop Gain and Phase vs. Frequency,
Gain = –1, RL = 150 Ω
130
120
G = –1
RL = 150⍀
110
PEAKING Յ 1.0dB
100
90
RF = 681⍀
RF = 715⍀
80
PEAKING Յ 0.2dB
70
60
50
40
30
0
2 4 6 8 10 12 14 16 18 20
SUPPLY VOLTAGE – ؎Volts
Figure 36. –3 dB Bandwidth vs. Supply Voltage,
Gain = –1, RL = 150 Ω
PHASE
VS = ؎15V
؎5V
G = –10
RL = 1k⍀
0
–90
1
GAIN
0
5V
3V
–180
–270
–1
VS = ؎15V
–2
؎5V
–3
5V
–4
3V
–5
–6
1
10 100
FREQUENCY – MHz
1000
Figure 38. Closed-Loop Gain and Phase vs. Frequency,
Gain = –10, RL = 1 kΩ
100
90
G = –10
RL = 1k⍀
80
70
RF = 357⍀
60
RF = 154⍀
50
RF = 649⍀
40
30
20
10
0
0 2 4 6 8 10 12 14 16 18 20
SUPPLY VOLTAGE – ؎Volts
Figure 39. –3 dB Bandwidth vs. Supply Voltage,
Gain = –10, RL = 1 kΩ
REV. B
–11–
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet AD812.PDF ] | |
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