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PDF AD8011 Data sheet ( Hoja de datos )
| Número de pieza | AD8011 | |
| Descripción | 300 MHz Current Feedback Amplifier | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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300 MHz
Current Feedback Amplifier
AD8011
FEATURES
Easy to Use
Low Power
1 mA Power Supply Current (5 mW on 5 VS)
High Speed and Fast Settling on 5 V
300 MHz, –3 dB Bandwidth (G = +1)
180 MHz, –3 dB Bandwidth (G = +2)
2000 V/s Slew Rate
29 ns Settling Time to 0.1%
Good Video Specifications (RL = 1 k⍀, G = +2)
Gain Flatness 0.1 dB to 25 MHz
0.02% Differential Gain Error
0.06؇ Differential Phase Error
Low Distortion
–70 dBc Worst Harmonic @ 5 MHz
–62 dBc Worst Harmonic @ 20 MHz
Single Supply Operation
Fully Specified for 5 V Supply
APPLICATIONS
Power Sensitive, High Speed Systems
Video Switchers
Distribution Amplifiers
A-to-D Driver
Professional Cameras
CCD Imaging Systems
Ultrasound Equipment (Multichannel)
5
G = +2
4 RF = 1k⍀
3 VS = +5V OR ؎5V
VOUT = 200mV p-p
2
1
0
–1
–2
–3
–4
–5
1 10 100 500
FREQUENCY (MHz)
Figure 1. Frequency Response; G = +2, VS = +5 V, or ±5 V
REV. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.
FUNCTIONAL BLOCK DIAGRAM
8-Lead PDIP and SOIC
NC 1
–IN 2
+IN 3
V– 4
AD8011
8 NC
7 V+
6 OUT
5 NC
NC = NO CONNECT
PRODUCT DESCRIPTION
The AD8011 is a very low power, high speed amplifier designed
to operate on +5 V or ± 5 V supplies. With wide bandwidth,
low distortion, and low power, this device is ideal as a general-
purpose amplifier. It also can be used to replace high speed
amplifiers consuming more power. The AD8011 is a current feed-
back amplifier and features gain flatness of 0.1 dB to 25 MHz
while offering differential gain and phase error of 0.02% and 0.06°
on a single 5 V supply. This makes the AD8011 ideal for profes-
sional video electronics such as cameras, video switchers, or any
high speed portable equipment. Additionally, the AD8011’s low
distortion and fast settling make it ideal for buffering high speed
8-, 10-, and 12-bit A-to-D converters.
The AD8011 offers very low power of 1 mA maximum and can
run on single 5 V to 12 V supplies. All this is offered in a small
8-lead PDIP or 8-lead SOIC package. These features fit well with
portable and battery-powered applications where size and power
are critical.
The AD8011 is available in the industrial temperature range of
–40°C to +85°C.
–40
G = +2
THIRD
RL = 150⍀
–60 SECOND
RL = 150⍀
–80 THIRD
RL =1k⍀
SECOND
RL = 1k⍀
–100
FREQUENCY (MHz)
10
20
Figure 2. Distortion vs. Frequency; VS = ±5 V
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved.
1 page  
AD8011
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation2
Plastic DIP Package (N) . . . . . . . Observe Derating Curves
Small Outline Package (R) . . . . . . Observe Derating Curves
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 2.5 V
Output Short-Circuit Duration
. . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range (N, R) . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1 Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2 Specification is for device in free air:
8-Lead PDIP Package: JA = 90°C/W
8-Lead SOIC Package: JA = 155°C/W
2.0
TJ = 150؇C
8-LEAD PLASTIC DIP PACKAGE
1.5
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8011
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150°C. Exceeding this limit temporarily
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a
junction temperature of 175°C for an extended period can result
in device failure.
While the AD8011 is internally short-circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature is not exceeded under all conditions. To ensure proper
operation, it is necessary to observe the maximum power derating
curves (shown in Figure 3).
1k⍀
1k⍀
RL
1k⍀
VOUT
VIN
50⍀
0.01F
10F
+VS
0.01F
10F
Figure 4. Test Circuit; Gain = +2
–VS
1.0
8-LEAD SOIC PACKAGE
0.5
0
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE (؇C)
Figure 3. Maximum Power Dissipation vs. Temperature
1k⍀
VIN
52.3⍀
1k⍀
RL
1k⍀
VOUT
0.01F
10F
+VS
0.01F
10F
Figure 5. Test Circuit; Gain = –1
–VS
Model
AD8011AN
AD8011AR
AD8011AR-REEL
AD8011AR-REEL7
ORDERING GUIDE
Temperature
Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
Package
Description
8-Lead PDIP
8-Lead SOIC
13" Tape and Reel
7" Tape and Reel
Package
Option
N-8
R-8
R-8
R-8
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8011 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
–4– REV. C
5 Page 
AD8011
(error current times the open-loop inverting input resistance) that
results (see Figure 7), a more exact low frequency closed-loop
transfer function can be described as
AV
=G
1
+
G × RI
TO
+
RF
TO
=G
1+
G
AO
+
RF
TO
for noninverting (G is positive).
AV
=G
1
+
1–G
AO
+
RF
TO
for inverting (G is negative).
where G is the ideal gain as previously described. With RI = TO /AO
(open-loop inverting input resistance), the second expression
(positive G) clearly relates to the classical voltage feedback op amp
equation with TO omitted due to its relatively much higher value
and thus insignificant effect. AO and TO are the open-loop dc
voltage and transresistance gains of the amplifier, respectively.
These key transfer variables can be described as
R1× gmf ×|A2|
AO = (1 – gmc × R1)
R1 × |A2|
and
TO =
2
Therefore
RI
=
1 – gmc ×
2 × gmf
R1
where gmc is the positive feedback transconductance (not shown)
and 1/gmf is the thermal emitter resistance of devices D1/D2 and
Q3/Q4. The gmc × R1 product has a design value that results in a
negative dc open-loop gain of typically –2500 V/V (see Figure 8).
+VS
RS LN
LS
VP
IE
TO (s)
AO (s)
LI ZI
LS
VO
RL CL
CP RN RF –VS
Z I = OPEN LOOP INPUT IMPEDANCE = CI || RL
Figure 7. ZI = Open-Loop Input Impedance
Though atypical of conventional CF or VF amps, this negative
open-loop voltage gain results in an input referred error term
(VP–VO/G = G/AO + RF/TO) that will typically be negative for G,
greater than +3/–4. As an example, for G = 10, AO = –2500,
and TO = 1.2 MΩ, results in an error of –3 mV using the AV
derivation above.
This analysis assumes perfect current sources and infinite transistor
VAs. (Q3, Q4 output conductances are assumed zero.) These
assumptions result in actual versus model open-loop voltage gain
and associated input referred error terms being less accurate for
low gain (G) noninverting operation at the frequencies below the
open-loop pole of the AD8011. This is primarily a result of the
input signal (VP) modulating the output conductances of Q3/Q4,
resulting in RI less negative than derived here. For inverting
operation, the actual versus model dc error terms are relatively
much less.
80
70
60
50
40
30
20
10
0
–10
–20
–30
1E+03
1E+04
PHASE
GAIN
AO(s)
1E+05 1E+06 1E+07
FREQUENCY (Hz)
1E+08
–90
–100
–110
–120
–130
–140
–150
–160
–170
–180
–190
–200
1E+09
Figure 8. Open-Loop Voltage Gain and Phase
AC TRANSFER CHARACTERISTICS
The ac small signal transfer derivations below are based on a
simplified single-pole model. Though inaccurate at frequencies
approaching the closed-loop BW (CLBW) of the AD8011 at low
noninverting external gains, they still provide a fair approxima-
tion and an intuitive understanding of its primary ac small signal
characteristics.
For inverting operation and high noninverting gains, these
transfer equations provide a good approximation to the actual
ac performance of the device.
To accurately quantify the VO versus VP relationship, AO(s)
and TO(s) need to be derived. This can be seen by the following
nonexpanded noninverting gain relationship
VO (s) /VP (s) =
G
G
AO [s]
+
RF
TO [s]
+
1
with
AO (s)
=
R1× gmf ×| A2 |
1 – gmc × R1
Sτ1
1 – gmc × R1
where R1 is the input resistance to A2/A2B, and τ1 (equal to
CD ϫ R1 ϫ A2) is the open-loop dominate time constant,
and
TO
(s)
=
|
A2 | ×R1
2
sτ1+ 1
–10–
REV. C
11 Page | ||
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| PDF Descargar | [ Datasheet AD8011.PDF ] | |
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