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دیتاشیت - IXYS Corporation - PolarHV Power MOSFET

شماره قطعه 99227
شرح مفصل PolarHV Power MOSFET
تولید کننده IXYS Corporation 
آرم IXYS Corporation 


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99227 شرح
Advanced Technical Information
PolarHVTM
Power MOSFET
Electrically Isolated Tab,
N-Channel Enhancement Mode,
Avalanche Rated
IXTC 26N50P
VDSS =
ID25 =
RDS(on) =
500 V
13 A
260 m
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
FC
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting Force
500
500
±20
±30
13
78
26
40
1.0
10
100
-55 ... +150
150
-55 ... +150
300
2500
11..65/2.5..15
2
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
N/lb
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = IT
Pulse test, t 300 µs, duty cycle d 2 %
260 m
ISOPLUS220TM (IXTC)
E153432
G
DS
Isolated Tab
G = Gate
S = Source
D = Drain
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low drain to tab capacitance(<30pF)
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99227(10/04)

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