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Allegro MicroSystems - MICROPOWER/ ULTRA-SENSITIVE HALL-EF FECT SWITCH

Numéro de référence A3212EEHLT
Description MICROPOWER/ ULTRA-SENSITIVE HALL-EF FECT SWITCH
Fabricant Allegro MicroSystems 
Logo Allegro MicroSystems 





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A3212EEHLT fiche technique
A3212
Package Sufx ‘LH’ Pinning
(SOT23W)
3
V
DD
1
2
Dwg. PH-016-1
Pinning is shown viewed from branded side.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, VDD .............................. 5 V
Magnetic Flux Density, B .......... Unlimited
Output Off Voltage, VOUT ...................... 5 V
Output Current, IOUT ........................... 1 mA
Junction Temperature, TJ ................ +170°C
Operating Temperature, TA
Range 'E-' .................... -40°C to +85°C
Range 'L-' .................. -40°C to +150°C
Storage Temperature Range,
TS .............................. -65°C to +170°C
Caution: These CMOS devices have input
static protection (Class 3) but are still sus-
ceptible to damage if exposed to extremely
high static electrical charges.
MICROPOWER, ULTRA-SENSITIVE
HALL-EFFECT SWITCH
The A3212 integrated circuit is an ultra-sensitive, pole independent Hall-
effect switch with a latched digital output. This sensor is especially suited for
operation in battery-operated, hand-held equipment such as cellular and cordless
telephones, pagers, and palmtop computers. A 2.5 volt to 3.5 volt operation and a
unique clocking scheme reduce the average operating power requirements to less
than 15 µW with a 2.75 volt supply.
Unlike other Hall-effect switches, either a north or south pole of sufcient
strength will turn the output on; in the absence of a magnetic eld, the output
is off. The polarity independence and minimal power requirement allow these
devices to easily replace reed switches for superior reliability and ease of manu-
facturing, while eliminating the requirement for signal conditioning.
Improved stability is made possible through chopper stabilization (dynamic
offset cancellation), which reduces the residual offset voltage normally caused
by device overmolding, temperature dependencies, and thermal stress.
This device includes on a single silicon chip a Hall-voltage generator,
small-signal amplier, chopper stabilization, a latch, and a MOSFET output.
Advanced BiCMOS processing is used to take advantage of low-voltage and
low-power requirements, component matching, very low input-offset errors, and
small component geometries.
Three package styles provide a magnetically optimized package for most ap-
plications. Package sufxes 'EH' and ‘LH’ are for miniature low-prole (lead-
less and leaded, respectively) surface-mount packages while sufx ‘UA’ is for
a three-lead SIP for through-hole mounting. Each package is available in a lead
(Pb) free version (sufx, –T) with 100% matte tin plated leadframe.
FEATURES
Micropower Operation
Operation with North or South Pole
2.5 V to 3.5 V Battery Operation
Chopper Stabilized
Superior Temperature Stability
Extremely Low Switch-Point Drift
Insensitive to Physical Stress
ESD Protected to 5 kV
Solid-State Reliability
Small Size
Easily Manufacturable with Magnet Pole Independence

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