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PDF AT202S08 Data sheet ( Hoja de datos )
| Número de pieza | AT202S08 | |
| Descripción | PHASE CONTROL THYRISTOR | |
| Fabricantes | Power Semiconductors | |
| Logotipo |  |
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ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
TARGET SPECIFICATION
Feb 97 - ISSUE : 03
AT202
Repetitive voltage up to
Mean on-state current
Surge current
800 V
635 A
6 kA
Symbol Characteristic
Conditions
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
V DRM
Repetitive peak off-state voltage
I RRM
Repetitive peak reverse current
V=VRRM
I DRM
Repetitive peak off-state current
V=VDRM
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
I TSM
Surge on-state current
sine wave, 10 ms
I² t I² t
without reverse voltage
V T On-state voltage
On-state current = 800 A
V T(TO)
Threshold voltage
r T On-state slope resistance
SWITCHING
di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 450 A, gate 10V 5ohm
dv/dt
Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM
td Gate controlled delay time, typical VD=100V, gate source 10V, 10 ohm , tr=.5 µs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 75% VDRM
Q rr Reverse recovery charge
di/dt=-20 A/µs, I= 290 A
I rr Peak reverse recovery current
VR= 50 V
I H Holding current, typical
VD=5V, gate open circuit
I L Latching current, typical
VD=5V, tp=30µs
GATE
V GT
Gate trigger voltage
VD=5V
I GT Gate trigger current
VD=5V
V GD
Non-trigger gate voltage, min.
VD=VDRM
V FGM
Peak gate voltage (forward)
I FGM
Peak gate current
V RGM
Peak gate voltage (reverse)
P GM
Peak gate power dissipation
Pulse width 100 µs
P G Average gate power dissipation
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
T j Operating junction temperature
F Mounting force
Mass
ORDERING INFORMATION : AT202 S 08
standard specification
VDRM&VRRM/100
Tj
[°C] Value Unit
150 800
150 900
150 800
150 30
150 30
V
V
V
mA
mA
635 A
575 A
150 6
kA
180 x1E3 A²s
150 1.19
V
150 0.8
V
150 0.490
mohm
150 320
150 500
25 1.6
200
150
25 300
25 700
A/µs
V/µs
µs
µs
µC
A
mA
mA
25 3.5
25 200
150 0.25
20
8
5
75
1
V
mA
V
V
A
V
W
W
95
20
-30 / 150
4.9 / 5.9
55
°C/kW
°C/kW
°C
kN
g
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AT202S08.PDF ] | |
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