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Power Semiconductors - RECTIFIER DIODE

Numéro de référence AR1109
Description RECTIFIER DIODE
Fabricant Power Semiconductors 
Logo Power Semiconductors 





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AR1109 fiche technique
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
RECTIFIER DIODE
FINAL SPECIFICATION
nov 02 - ISSUE : 05
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
AR1109
Repetitive voltage up to
Mean forward current
Surge current
Conditions
V=VRRM
4400 V
1000 A
10.3 kA
Tj
[°C]
Value
Unit
150 4400
150 4500
150 50
V
V
mA
CONDUCTING
I F (AV)
Mean forward current
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° sin ,50 Hz, Tc=85°C, double side cooled
Sine wave, 10 ms
without reverse voltage
Forward current =
1800 A
1000
A
905 A
150 10.3
kA
530 x 1E3 A²s
25 1.80
V
150 0.89
V
150 0.675
mohm
SWITCHING
t rr Reverse recovery time
Q rr Reverse recovery charge
I rr Peak reverse recovery current
µs
150 µC
A
MOUNTING
R th(j-h)
Thermal impedance, DC
R th(c-h)
Thermal impedance
T j Operating junction temperature
F Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
ORDERING INFORMATION : AR1109 S 44
standard specification
VRRM/100
37 °C/kW
7 °C/kW
-30 / 150
°C
11.8 / 13.2 kN
300 g

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