DataSheetWiki


AT-108 fiches techniques PDF

Tyco Electronics - Voltage Variable Absorptive Attenuator 40 dB/ 0.5-3.0 GHz

Numéro de référence AT-108
Description Voltage Variable Absorptive Attenuator 40 dB/ 0.5-3.0 GHz
Fabricant Tyco Electronics 
Logo Tyco Electronics 





1 Page

No Preview Available !





AT-108 fiche technique
Voltage Variable Absorptive Attenuator
40 dB, 0.5—3.0 GHz
AT-108
Features
Single Positive Voltage Control 0 to +5 Volts
40 dB Attenuation Range at 900 MHZ GHz
± 2 dB Linearity from BSL
Low DC Power Consumption
Low-Cost SOIC-8 Plastic Package
Tape and Reel Packaging Available
Description
M/A-COM’s AT-108 is a GaAs, MESFET MMIC voltage
variable absorptive attenuator in a low cost SOIC-8 lead surface
mount plastic package. The AT-108 is ideally suited for use
where linear attenuation fine tuning and very low power
consumption are required. Typical applications include radio,
cellular, GPS equipment and automatic gain/level control
circuits.
The AT-108 is fabricated with a monolithic GaAs MMIC using
a mature 1-micron process. The process features full chip
passivation for increased performance and reliability.
SOIC-81
PIN 8
Oreintation
Mark
.1497/.1574
(3.80/4 .00)
-B-
.2284/.2440
(5.80/6.20)
.010(.25)M B M
PIN 1
.0532/.0688
(1.35/1.75)
.004(0.10)
.1890/.1968
(4.80/5 .00)
-A-
CHAMFER
(OPTIONAL
.0040/.0098
)
(.10/.25) 0°/80°
-C-
.050(1.27B) SC.
.013/.020 (8
(.3P3L/.)51)
.010(.25)M C AM B S
1. Dimensions are in inches/mm.
.016/.050
(0.40/1.27)
.0075/.0098
(.19/.25)
Ordering Information
Part Number
Package
AT-108
AT-108TR
AT-108RTR
SOIC-8 Lead Plastic Package
Forward Tape and Reel1
Reverse Tape and Reel1
1. If specific reel size is required, consult factory for part number
assignment.
Electrical Specifications: TA = 25°C1=
Parameter
Test Conditions1
Insertion Loss
0.5 - 1.0 GHz
1.0 - 3.0 GHz
Attenuation
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
Flatness
0.5 - 1.0 GHz
(Peak-to-Peak)
1.0 - 2.0 GHz
2.0 - 3.0 GHz
VSWR
0.5 - 3.0 GHz
Trise, Tfall
Ton, Toff
Transients
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, Control to 10% RF
In-band
1. All measurements in a 50system.
Units
dB
dB
dB
dB
dB
dB
dB
dB
µs
µs
mV
Min.
40
35
28
Typ.
2.5
3.2
±0.5
±1.2
±1.5
2:1
15
25
12
Max.
2.7
3.5
±0.8
±1.5
±1.8
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
V 4.0

PagesPages 3
Télécharger [ AT-108 ]


Fiche technique recommandé

No Description détaillée Fabricant
AT-100 Fixed Attenuators (SMA Type) Hirose Electric
Hirose Electric
AT-1000 High Power Fixed Attenuators (Radiator built-in) Hirose Electric
Hirose Electric
AT-1001 High Power Fixed Attenuators (Radiator built-in) Hirose Electric
Hirose Electric
AT-1002 High Power Fixed Attenuators (Radiator built-in) Hirose Electric
Hirose Electric

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche