|
|
PDF AT-30511-TR1 Data sheet ( Hoja de datos )
| Número de pieza | AT-30511-TR1 | |
| Descripción | Low Current/ High Performance NPN Silicon Bipolar Transistor | |
| Fabricantes | Agilent(Hewlett-Packard) | |
| Logotipo | .gif "Agilent(Hewlett-Packard)"){kind=logo} |
|
Hay una vista previa y un enlace de descarga de AT-30511-TR1 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-30511
AT-30533
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
AT-30511:1.1dB NF, 16 dB GA
AT-30533:1.1dB NF, 13 dB GA
• Characterized for End-Of-
Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-And-Reel Packaging
Option Available[1]
Outline Drawing
EMITTER COLLECTOR
305
BASE EMITTER
SOT-143 (AT-30511)
COLLECTOR
305
BASE EMITTER
SOT-23 (AT-30533)
Note:
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”.
Description
Hewlett-Packard’s AT-30511 and
AT-30533 are high performance
NPN bipolar transistors that have
been optimized for maximum fT at
low voltage operation, making
them ideal for use in battery
powered applications in wireless
markets. The AT-30533 uses the 3
lead SOT-23, while the AT-30511
places the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a multi-
plicity of tasks. The 5 emitter
finger interdigitated geometry
yields an extremely fast transistor
with high gain and low operating
currents.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 13 dB or more
associated gain at a 2.7 V, 1 mA
bias. Voltage breakdowns are high
enough for use at 5 volts. High
gain capability at 1 V, 1 mA makes
these devices a good fit for
900␣ MHz pager applications.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett- Packard’s
10␣ GHz f T, 30 GHz fMAX Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
4-23
5965-8918E
1 page  
AT-30511 Typical Scattering Parameters, VCE = 1 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq.
GHz
S11
Mag Ang
S21
dB Mag Ang
S12 S22
dB
Mag Ang
Mag Ang
0.1 0.97 -5
10.84 3.48 175
0.5 0.95 -24 10.51 3.35 155
0.9 0.85 -42
9.96 3.15 137
1.0 0.83 -46
9.66 3.04 133
1.5 0.70 -67
8.71 2.73 113
1.8 0.63 -78
8.06 2.53 102
2.0 0.59 -85
7.75 2.44 96
2.4 0.50 -100 6.73 2.17 84
3.0 0.39 -122 5.58 1.90 67
4.0 0.29 -161 3.97 1.58 45
5.0 0.27 153
2.64 1.36 25
AT-30511 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 1 V, IC = 1 mA
Freq
GHz
Fmin[1]
dB
Mag
ΓOPT
Ang
-39.42
-25.87
-21.46
-20.71
-18.44
-17.69
-17.27
-16.79
-16.32
-15.87
-15.47
0.01 86
0.05 72
0.08 61
0.09 58
0.12 46
0.13 41
0.14 37
0.14 32
0.15 27
0.16 20
0.17 20
30
0.99 -2
0.95 -14
0.92 -24
0.91 -26
0.84 -36
0.80 -40
0.77 -43
0.73 -48
0.68 -53
0.63 -63
0.61 -72
20
Rn MSG
0.5[2]
0.3
0.96 10
1.49
0.9
0.4
0.92 19
1.33
1.8
0.9
0.83 43
0.98
2.4
1.3
0.76 60
0.74
Notes:
1. Matching constraints may make Fmin values associated with high |Γopt| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
10 MAG
S21
MSG
0
01 2 3 4
FREQUENCY (GHz)
5
Figure 17. AT-30511 Gains vs.
Frequency at VCE␣ = 1 V, IC␣ = 1 mA.
AT-30533 Typical Scattering Parameters, VCE = 1 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq.
GHz
S11
Mag Ang
S21
dB Mag Ang
S12 S22
dB
Mag Ang
Mag Ang
0.1 0.95 -5
10.90 3.51 174
-38.36
0.01
87
0.99 -3
0.5
0.91 -25
10.32 3.28 150
-25.08 0.06 73
0.95 -14
0.9 0.77 -41
9.44 2.97 128
-20.95 0.09 63
0.89 -24
1.0 0.73 -45
9.03 2.83 124
-20.21 0.10 61
0.88 -25
1.5 0.55 -62
7.75 2.44 102
-18.13 0.12 54
0.80 -33
1.8 0.46 -71
6.94 2.22 91
-17.33 0.14 51
0.77 -36
2.0 0.41 -76
6.51 2.12 85
-16.84 0.14 50
0.74 -38
2.4 0.30 -85
5.45 1.87 73
-16.05 0.16 49
0.71 -41
3.0 0.17 -95
4.26 1.63 57
-14.80 0.18 49
0.68 -46
4.0 0.02 -139 2.71 1.37 37 -12.58 0.24 48 0.65 -57
5.0 0.12 61
1.56 1.20 19
-10.14 0.31 45
0.62 -69
AT-30533 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 1 V, IC = 1 mA
Freq
GHz
Fmin[1]
dB
Mag
ΓOPT
Ang
Rn
0.5[2]
0.9
1.8
2.4
0.3
0.4
0.9
1.3
0.94 7
0.89 16
0.75 43
0.65 65
1.02
0.86
0.58
0.38
Notes:
1. Matching constraints may make Fmin values associated with high |Γopt| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
4-27
30
20
MSG
10 MAG
S21
MSG
0
01 2 3 4
FREQUENCY (GHz)
5
Figure 18. AT-30533 Gains vs.
Frequency at VCE␣ = 2 .7 V, IC␣ = 1 mA.
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AT-30511-TR1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AT-30511-TR1 | Low Current/ High Performance NPN Silicon Bipolar Transistor | Agilent(Hewlett-Packard) |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |