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AT-30511-TR1 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Agilent(Hewlett-Packard) - Low Current/ High Performance NPN Silicon Bipolar Transistor

شماره قطعه AT-30511-TR1
شرح مفصل Low Current/ High Performance NPN Silicon Bipolar Transistor
تولید کننده Agilent(Hewlett-Packard) 
آرم Agilent(Hewlett-Packard) 


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AT-30511-TR1 شرح
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-30511
AT-30533
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
AT-30511:1.1dB NF, 16 dB GA
AT-30533:1.1dB NF, 13 dB GA
• Characterized for End-Of-
Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-And-Reel Packaging
Option Available[1]
Outline Drawing
EMITTER COLLECTOR
305
BASE EMITTER
SOT-143 (AT-30511)
COLLECTOR
305
BASE EMITTER
SOT-23 (AT-30533)
Note:
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”.
Description
Hewlett-Packard’s AT-30511 and
AT-30533 are high performance
NPN bipolar transistors that have
been optimized for maximum fT at
low voltage operation, making
them ideal for use in battery
powered applications in wireless
markets. The AT-30533 uses the 3
lead SOT-23, while the AT-30511
places the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a multi-
plicity of tasks. The 5 emitter
finger interdigitated geometry
yields an extremely fast transistor
with high gain and low operating
currents.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 13 dB or more
associated gain at a 2.7 V, 1 mA
bias. Voltage breakdowns are high
enough for use at 5 volts. High
gain capability at 1 V, 1 mA makes
these devices a good fit for
900␣ MHz pager applications.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett- Packard’s
10␣ GHz f T, 30 GHz fMAX Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
4-23
5965-8918E

قانون اساسیصفحه 10
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دیتاشیت توصیه

شماره قطعه شرح مفصل تولید کنندگان
AT-30511-TR1 Low Current/ High Performance NPN Silicon Bipolar Transistor Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

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