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AT-31625-TR1 fiches techniques PDF

Agilent(Hewlett-Packard) - 4.8 V NPN Common Emitter Medium Power Output Transistor

Numéro de référence AT-31625-TR1
Description 4.8 V NPN Common Emitter Medium Power Output Transistor
Fabricant Agilent(Hewlett-Packard) 
Logo Agilent(Hewlett-Packard) 





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AT-31625-TR1 fiche technique
4.8 V NPN Common Emitter
Medium Power Output Transistor
Technical Data
AT-31625
Features
• 4.8 Volt Operation
• +28.0 dBm Pout @ 900 MHz,
Typ.
• 70% Collector Efficiency
@␣ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz,
Typ.
• -31 dBc IMD3 @ Pout of
21␣ dBm per Tone, 900␣ MHz,
Typ.
• 50% Smaller than SOT-223
Package
MSOP-3 Surface Mount
Plastic Package
Outline 25
Pin Configuration
COLLECTOR
4
Applications
• Medium Power Driver
Device for Cellular/PCS,
ISM 900, WLAN
• Output Power Device for
ISM 900, Cordless, WLAN
EMITTER 1 2 3 EMITTER
BASE
Description
Hewlett Packard’s AT-31625 is a
low cost, NPN medium power
silicon bipolar junction transistor
housed in a miniature, MSOP-3
surface mount plastic package.
The AT-31625 can be used as a
driver device or an output device,
depending on the specific applica-
tion. The AT-31625 features
+28␣ dBm CW output power when
operated at 4.8 volts. Excellent
gain and superior efficiency make
the AT-31625 ideal for use in
battery powered systems.
The AT-31625 is fabricated with
Hewlett Packard’s 10 GHz Ft Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
4-43
5965-5911E

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