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PDF AT-32011 Data sheet ( Hoja de datos )
| Número de pieza | AT-32011 | |
| Descripción | Low Current/ High Performance NPN Silicon Bipolar Transistor | |
| Fabricantes | Agilent(Hewlett-Packard) | |
| Logotipo | .gif "Agilent(Hewlett-Packard)"){kind=logo} |
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Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-32011
AT-32033
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
AT-32011: 1 dB NF, 14 dB GA
AT-32033: 1 dB NF, 12.5 dB GA
• Characterized for End-Of-
Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-And-Reel Packaging
Option Available[1]
Outline Drawing
EMITTER COLLECTOR
320
BASE EMITTER
SOT-143 (AT-32011)
COLLECTOR
320
Description
Hewlett Packard’s AT-32011 and
AT-32033 are high performance
NPN bipolar transistors that have
been optimized for maximum ft at
low voltage operation, making
them ideal for use in battery
powered applications in wireless
markets. The AT-32033 uses the
3␣ lead SOT-23, while the AT-320 11
places the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a
multiplicity of tasks. The
20␣ emitter finger interdigitated
geometry yields an easy to match
to and extremely fast transistor
with moderate power, low noise
resistance, and low operating
currents.
BASE EMITTER
SOT-23 (AT-32033)
Note:
1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices.”
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.2 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 2 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes these devices a
good fit for 900 MHz pager
applications. Voltage breakdowns
are high enough for use at 5 volts.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett Packard’s
10␣ GHz ft, 30 GHz fMAX Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
4-53
5965-8920E
1 page  
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω
Freq.
S11
S21
GHz Mag Ang dB Mag Ang dB
S12
Mag
VCE = 1 V, IC = 1 mA
S22
Ang Mag Ang
0.1 0.97 -11 11.09 3.59 172 -33.55 0.021 83 0.99 -5
0.5 0.88 -52 10.13 3.21 141 -20.85 0.091 59 0.92 -21
0.9 0.78 -86 8.67 2.71 117 -17.62 0.132 41 0.82 -32
1.0 0.75 -94 8.35 2.62 112 -17.27 0.137 37 0.79 -35
1.5 0.67 -127 6.35 2.08 89 -16.30 0.153 23 0.71 -45
1.8 0.63 -144 5.25 1.83 77 -16.28 0.154 16 0.67 -50
2.0 0.61 -155 4.75 1.73 70 -16.42 0.151 13 0.65 -53
2.4 0.59 -175 3.48 1.49 57 -16.86 0.144 9 0.62 -59
3.0 0.59 157 1.77 1.23 40 -17.89 0.128 8 0.61 -68
4.0 0.63 120 -0.39 0.96 18 -18.40 0.120 23 0.59 -84
5.0
0.69
94
-2.39
0.76
0 -15.60 0.166 35 0.59 -104
25
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA
Freq.
GHz
Fmin
dB
Γopt
Mag
Ang
Rn
–
15
MSG
0.5[1] 0.42 0.79
0.9 0.71 0.70
26 0.44
54 0.35
5 S21
MAG
1.8 1.37 0.53 119 0.18
2.4 1.80 0.55 158
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
0.08
-5
01 2 3 4 5
FREQUENCY (GHz)
Figure 17. AT-32011 Gains vs.
Frequency at VCE␣ = 1 V, IC␣ = 1 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω VCE = 1 V, IC = 1 mA
Freq.
S11
S21
S12 S22
GHz Mag Ang dB Mag Ang dB
Mag Ang Mag Ang
0.1 0.97 -11 11.09 3.58 170 -32.75 0.023 83 0.99 -5
0.5 0.81 -52 9.88 3.12 134 -20.30 0.097 60 0.90 -22
0.9 0.61 -87 8.07 2.53 107 -17.57 0.132 46 0.78 -33
1.0 0.56 -95 7.65 2.41 101 -17.24 0.137 44 0.76 -35
1.5 0.41 -136 5.43 1.87 77 -16.61 0.148 39 0.68 -42
1.8 0.36 -160 4.30 1.64 66 -16.36 0.152 41 0.65 -46
2.0 0.34 -177 3.74 1.54 59 -16.05 0.158 44 0.63 -49
2.4 0.34 154 2.49 1.33 47 -15.10 0.176 49 0.61 -55
3.0 0.38 119 0.96 1.12 32 -12.77 0.230 55 0.59 -65
4.0
0.46
81
-0.84
0.91
15
-8.68
0.368
50
0.56 -87
5.0
0.51
56
-1.90
0.80
5
-5.68
0.520 37
0.51 -114
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA
Freq.
GHz
Fmin
dB
Γopt
Mag
Ang
0.5[1]
0.9
1.8
2.4
0.42 0.87
0.71 0.73
1.37 0.42
1.80 0.50
25
55
143
-162
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
4-57
Rn
–
0.48
0.34
0.11
0.07
25
15
MSG
MAG
5
S21
MSG
-5
01 2 3 4 5
FREQUENCY (GHz)
Figure 18. AT-32033 Gains vs.
Frequency at VCE␣ = 1 V, I C␣ = 1 mA.
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AT-32011.PDF ] | |
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