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PDF AT-32063-TR1 Data sheet ( Hoja de datos )
| Número de pieza | AT-32063-TR1 | |
| Descripción | dANPNgWX^ cCE^CvSOT-363pbP[W | |
| Fabricantes | Agilent(Hewlett-Packard) | |
| Logotipo | .gif "Agilent(Hewlett-Packard)"){kind=logo} |
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Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-32063
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
1.1␣ dB NF, 14.5␣ dB G A
• Characterized for End-of-
Life Battery Use (2.7 V)
• SOT-363 (SC-70) Plastic
Package
• Tape-and-Reel Packaging
Option Available [1]
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
1
B1
2
E1
3
C2
6
C1
5
E2
4
B2
Description
The AT-32063 contains two high
performance NPN bipolar transis-
tors in a single SOT-363 package.
The devices are unconnected,
allowing flexibility in design. The
pin-out is convenient for cascode
amplifier designs. The SOT-363
package is an industry standard
plastic surface mount package.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of the transistor yields extremely
high performance products that
can perform a multiplicity of
tasks. The 20 emitter finger
interdigitated geometry yields a
transistor that is easy to match to
and extremely fast, with moderate
power, low noise resistance, and
low operating currents.
Optimized performance at 2.7 V
makes this device ideal for use in
900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 5 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes this device a
good fit for 900 MHz pager appli-
cations. Voltage breakdowns are
high enough for use at 5 volts.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett-Packard’s
10␣ GHz f t , 30 GHz fmax Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metallization in the fabrication of
these devices.
4-63
5965-8921E
1 page  
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 5 mA
Freq.
S11
S21
S12 S22
GHz
Mag
Ang
dB
Mag Ang
dB
Mag
Ang
Mag
Ang
0.1
0.87 -19 23.36 14.72 162 -37.77 0.013 80
0.96
-9
0.5
0.52 -72 19.21 9.13 116 -27.03 0.045 60
0.72 -25
0.9
0.34 -101 15.40 5.89
94 -24.01 0.063 58
0.62 -28
1.0
0.31 -106 14.60 5.37
90 -23.41 0.067 58
0.61 -29
1.5
0.22 -129 11.54 3.77
74 -20.85 0.091 58
0.58 -33
1.8
0.19 -141 10.12 3.21
66 -19.52 0.106 58
0.57 -36
2.0
0.17 -150
9.33 2.93
61 -18.72 0.116 57
0.57 -38
2.4
0.14 -169
7.95 2.50
52 -17.22 0.138 56
0.57 -42
3.0
0.12 160
6.34 2.08
39 -15.25 0.173 52
0.56 -49
4.0
0.16 117
4.46 1.67
20 -12.40 0.240 44
0.53 -63
5.0
0.22 93 3.15 1.44
2 -10.03 0.315 33
0.48 -82
35
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 5 mA
Freq.
GHz
0.9
1.8
2.4
Fmin
dB
0.98
1.50
1.77
GA Gopt
dB
Mag.
Ang.
16.4 0.45
11.6 0.29
10.1 0.33
51
100
153
Rn
—
0.23
0.16
0.11
30
25 MSG
20
15
MAG
10
S21
5
MSG
0
0.1 1.1 2.1
3.1 4.1
5.1
FREQUENCY (GHz)
Figure 9. Gain vs. Frequency at
VCE=2.7 V, IC = 5mA.
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 20 mA
Freq.
S11
S21
S12 S22
GHz
Mag
Ang
dB
Mag Ang
dB
Mag
Ang
Mag
Ang
0.1
0.55 -41 30.48 33.40 143 -39.81 0.010 74
0.83 -15
0.5
0.20 -107 21.24 11.53
97 -29.18 0.035 72
0.56 -20
0.9
0.13 -137 16.48 6.66
82 -24.63 0.059 72
0.53 -22
1.0
0.13 -141 15.60 6.02
79 -23.79 0.065 71
0.53 -22
1.5
0.10 -164 12.26 4.10
67 -20.43 0.095 68
0.52 -27
1.8
0.09 -178 10.78 3.46
60 -18.88 0.114 66
0.53 -31
2.0
0.09 172
9.93 3.14
56 -17.98 0.126 64
0.53 -34
2.4
0.08 152
8.52 2.67
48 -16.39 0.151 60
0.53 -39
3.0
0.10 127
6.85 2.20
36 -14.4
0.191 54
0.52 -47
4.0
0.15 101
4.92 1.76
18 -11.68 0.261 43
0.48 -61
5.0
0.21 86 3.59 1.51
0 -9.52 0.334 31
0.44 -79
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 20 mA
Freq.
GHz
Fmin
dB
GA Gopt
dB
Mag.
Ang.
0.9 1.51 17.9 0.13
88
1.8 1.78 12.7 0.20 178
2.4 1.96 10.6 0.28 235
Rn
—
0.20
0.13
0.08
4-67
40
35
30 MSG
25
20
MAG
15
10
S21
5
MSG
0
0.1 1.1 2.1
3.1 4.1
5.1
FREQUENCY (GHz)
Figure 10. Gain vs. Frequency at
VCE=2.7 V, IC = 20mA.
5 Page | ||
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| PDF Descargar | [ Datasheet AT-32063-TR1.PDF ] | |
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