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PDF AT-33225-TR1 Data sheet ( Hoja de datos )
| Número de pieza | AT-33225-TR1 | |
| Descripción | 4.8 V NPN Common Emitter Output Power Transistor for AMPS/ ETACS Phones | |
| Fabricantes | Agilent(Hewlett-Packard) | |
| Logotipo | .gif "Agilent(Hewlett-Packard)"){kind=logo} |
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4.8 V NPN Common Emitter
Output Power Transistor
for␣ AMPS, ET ACS Phones
Technical Data
AT-33225
Features
• 4.8 Volt Operation
• +31.0 dBm Pout @ 900 MHz,
Typ.
• 70% Collector Efficiency
@␣ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz,
Typ.
• -29 dBc IMD3 @ Pout of
24␣ dBm per tone, 900 MHz,
Typ.
• Internal Input Pre-Matching
Facilitates Cascading
• 50% Smaller than SOT-223
Package
MSOP-3 Surface Mount
Plastic Package
Outline 25
Pin Configuration
COLLECTOR
4
Applications
• Output Power Device for
AMPS and ETACS Handsets
• 900 MHz ISM
EMITTER 1 2 3 EMITTER
BASE
Description
Hewlett Packard’s AT-33225 is a
low cost, NPN power silicon
bipolar junction transistor housed
in a miniature MSOP-3 surface
mount plastic package. This
device is designed for use as an
output device for AMPS and
ETACS mobile phones. The
AT-33225 features over 1 watt
CW␣ output power when operated
at 4.8 volts. Excellent gain and
superior efficiency make the
AT-33225 ideal for use in battery
powered systems.
The AT-33225 is fabricated with
Hewlett Packard’s 10 GHz Ft Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
4-71
5965-5910E
1 page  
AT-33225 Typical Large Signal Impedances
VCE = 4.8 V, ICQ = 6 mA, Pout = +31.0 dBm
Freq.
MHz
750
800
850
900
950
Γ source
Mag.
Ang.
0.77 -162
0.80 -169
0.82 -164
0.82 -163
0.83 -166
Γ load
Mag.
Ang.
0.64 -174
0.67 -173
0.64 -175
0.67 -174
0.74 -175
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
0 2 4 6 8 10
Vcb (V)
Figure 11. Collector-Base
Capacitance vs. Collector-Base
Voltage (DC Test).
SPICE Model Parameters
Die Model
CPad
CPad
B
C
CPad
Die Area = 1.2
CPad = 0.3 pF
Label
BF
IKF
ISE
NE
VAF
NF
TF
XTF
VTF
ITF
PTF
XTB
BR
IKR
ISC
NC
VAR
NR
Value
280
299.9
9.9E-11
2.399
33.16
0.9935
1.6E-11
0.006656
0.02785
0.001
23
0
54.61
81
8.7E-13
1.587
1.511
0.9886
E1
Label
TR
EG
IS
XTI
CJC
VJC
MJC
XCJC
FC
CJE
VJE
MJE
RB
IRB
RBM
RE
RC
Value
1E-9
1.11
3.598E-15
3
0.8E-12
0.4831
0.2508
0.001
0.999
6.16E-12
1.186
0.5965
0.752
0
0.01
1.27
0.107
E2
Packaged Model
Cbc
RB RB
LB2 LB3
Die
CM
LE2 LE2
LB1 R1
B
Cbe
RB RB
LB2 LB3
Die
CM
LE2 LE2
LC1
C
Cce
Label Value
Cbc 0.80 pF
Cbe 0.006 pF
Cce 3.17 pF
CM 20.8 pF
LB1 0.63 nH
LB2 0.10 nH
LB3 0.87 nH
LE1 0.35 nH
LE2 0.78 nH
LC1 0.74 nH
RB 0.1 Ω
R1 0.2 Ω
R1
LE1
E
4-75
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AT-33225-TR1.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| AT-33225-TR1 | 4.8 V NPN Common Emitter Output Power Transistor for AMPS/ ETACS Phones | Agilent(Hewlett-Packard) |
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