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PDF AT-36408 Data sheet ( Hoja de datos )

Número de pieza AT-36408
Descripción 4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones
Fabricantes Agilent(Hewlett-Packard)　
Logotipo Agilent(Hewlett-Packard) Logotipo



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4.8 V NPN Common Emitter
Output Power Transistor
for␣ GSM Class IV Phones
Technical Data
AT-36408
Features
• 4.8 Volt Pulsed Operation
(pulse width = 577 µsec,
duty cycle = 12.5%)
• +35.0 dBm Pout @ 900 MHz,
Typ.
• 65% Collector Efficiency
@␣ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz,
Typ.
• Internal Input Pre-Matching
Facilitates Cascading
Applications
• Output Power Device for
GSM Class IV Handsets
SOIC-8 Surface Mount
Plastic Package
Outline P8
Pin Configuration
BASE 1
EMITTER 2
COLLECTOR 3
EMITTER 4
8 BASE
7 EMITTER
6 COLLECTOR
5 EMITTER
Description
Hewlett Packard’s AT-36408
combines internal input pre-
matching with low cost, NPN
power silicon bipolar junction
transistors in a SOIC-8 surface
mount plastic package. This
device is designed for use as the
output device for GSM Class IV
handsets. At 4.8 volts, the device
features +35 dBm pulsed output
power, superior power added
efficiency, and excellent gain,
making the AT-36408 an excellent
choice for battery powered
systems.
The AT-36408 is fabricated with
Hewlett Packard’s 10 GHz Ft Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
4-81
5965-5960E

1 page




AT-36408 pdf
AT-36408 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω
VCE = 3.6 V, Ic = 200 mA, Tc = 25°C
Freq.
GHz
S11
Mag. Ang.
S21
dB Mag. Ang.
S12 S22
dB Mag. Ang. Mag. Ang.
0.05 0.96 -175 22.3 13.08 93
-38.4 0.012 11
0.74 -169
0.10 0.96 -178 16.4 6.61 88
-37.7 0.013 13
0.74 -174
0.25 0.96 177
8.8 2.76 80
-36.5 0.015 24
0.75 -177
0.50 0.94 173
4.2 1.63 66
-34.4 0.019 33
0.73 -177
0.75 0.90 169
3.4 1.49 46
-32.0 0.025 27
0.71 -172
0.90 0.84 168
4.2 1.63 24
-32.0 0.025 10
0.72 -165
1.00 0.79 170
4.6 1.70 0
-34.0 0.020 -14
0.81 -160
1.25 0.92 175
-1.2 0.87 -68
-37.1 0.014 126
1.01 -172
1.50 0.97 169
-9.6 0.33 -98
-30.2 0.031 97
0.96 -177
VCE = 4.8 V, Ic = 200 mA, Tc = 25°C
0.05 0.96 -174 22.6
0.10 0.96 -178 16.6
0.25 0.96 178
9.0
0.50 0.94 173
4.4
0.75 0.90 169
3.6
0.90 0.84 168
4.3
1.00 0.80 170
4.6
1.25 0.92 175
-1.0
1.50 0.97 169
-9.4
13.42
6.79
2.83
1.66
1.51
1.64
1.71
0.89
0.34
93
88
80
66
46
24
0
-67
-97
-37.7
-37.7
-36.5
-34.4
-32.4
-32.0
-34.0
-37.1
-30.2
0.013
0.013
0.015
0.019
0.024
0.025
0.020
0.014
0.031
11
13
23
32
26
9
-14
126
97
0.74 -169
0.73 -174
0.74 -177
0.72 -176
0.70 -172
0.72 -164
0.81 -160
1.01 -171
0.96 -177
VCE = 6.0 V, Ic = 200 mA, Tc = 25°C
0.05 0.96 -174 22.7
0.10 0.96 -178 16.7
0.25 0.96 178
9.2
0.50 0.94 173
4.5
0.75 0.90 169
3.7
0.90 0.85 168
4.3
1.00 0.80 170
4.6
1.25 0.92 175
-1.0
1.50 0.97 169
-9.2
13.60
6.88
2.87
1.68
1.52
1.64
1.70
0.90
0.35
93
88
79
65
45
23
0
-67
-97
-37.7
-37.1
-35.9
-34.0
-32.0
-32.0
-34.0
-37.7
-30.2
0.013
0.014
0.016
0.020
0.025
0.025
0.020
0.013
0.031
12
14
23
30
24
8
-14
125
96
0.73 -169
0.72 -174
0.73 -177
0.71 -176
0.69 -171
0.72 -164
0.81 -159
1.01 -171
0.95 -177
Typical Performance
35
30 MSG
35
30 MSG
25 25
MAG
MSG
20 20
MAG
MSG
15 15
10 10
5 |S21|2
0
5 |S21|2
0
-5
-10
0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50
FREQUENCY (GHz)
Figure 8. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. VCE = 3.6V,
Ic = 200 mA.
-5
-10
0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50
FREQUENCY (GHz)
Figure 9. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. VCE = 4.8V,
Ic = 200 mA.
35
30
MSG
25
MAG
20
MSG
15
10
5 |S21|2
0
-5
-10
0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50
FREQUENCY (GHz)
Figure 10. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. VCE = 6.0V,
Ic = 200 mA.
4-85

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