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PDF AT-38086-TR1 Data sheet ( Hoja de datos )

Número de pieza AT-38086-TR1
Descripción 4.8 V NPN Silicon Bipolar Common Emitter Transistor
Fabricantes Agilent(Hewlett-Packard) 
Logotipo Agilent(Hewlett-Packard) Logotipo



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4.8 V NPN Silicon Bipolar
Common␣ Emitter Transistor
Technical Data
AT-38086
Features
• 4.8 Volt Pulsed
(pulse width = 577 µsec,
duty cycle = 12.5%)/CW
Operation
• +28 dBm Pulsed Pout
@␣ 900␣ MHz,Typ.
• +23.5 dBm CW Pout
@␣ 836.5␣ MHz,Typ.
• 60% Pulsed Collector
Efficiency @ 900 MHz, Typ.
• 11 dB Pulsed Power Gain
@␣ 900 MHz, Typ.
• -35 dBc IMD3 @ Pout of
17␣ dBm per tone, 900 MHz,
Typ.
Applications
• Driver Amplifier for GSM
and AMPS/ETACS/ 900 MHz
NMT Cellular Phones
• 900 MHz ISM and Special
Mobile Radio
85 mil Plastic Surface
Mount Package
Outline 86
Pin Configuration
4
EMITTER
1
BASE
2
EMITTER
3
COLLECTOR
Description
Hewlett Packard’s AT-38086 is a
low cost, NPN silicon bipolar
junction transistor housed in a
surface mount plastic package.
This device is designed for use as
a pre-driver or driver device in
applications for cellular and
wireless communications
markets. At 4.8 volts, the
AT-38086 features +28 dBm pulsed
output power, Class AB operation,
and +23.5␣ dBm CW. Superior
efficiency and gain makes the
AT-38086 an excellent choice for
battery powered systems.
The AT-38086 is fabricated with
Hewlett Packard’s 10 GHz Ft Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
4-89
5965-5959E

1 page




AT-38086-TR1 pdf
AT-38086 Typical Large Signal Impedances (GSM)
Freq. = 900 MHz, VCE = 4.8 V, ICQ = 20 mA, Pulsed Operation, Pout␣ =␣ +28.0 dBm
Freq.
Γ source
Γ load
MHz
Mag.
Ang.
Mag.
Ang.
880
0.743
-175.6
0.474
162.0
890
0.741
-176.4
0.476
161.5
900
0.747
-177.3
0.478
161.2
910
0.751
-178.1
0.481
160.0
915
0.752
-178.6
0.482
159.6
920
0.754
-179.1
0.483
158.9
AT-38086 Typical Large Signal Impedances (AMPS)
Freq. = 836.5 MHz, VCE = 4.8 V, ICQ = 15 mA, CW Operation, Pout␣ =␣ +23.5 dBm
Freq.
Γ source
Γ load
MHz
Mag.
Ang.
Mag.
Ang.
824
836.5
849
0.856
0.864
0.870
-178.9
-179.9
-179.1
0.455
0.459
0.464
129.1
128.2
127.3
3.5
3.3
3.1
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
01 2 345 6 7 89
Vcb (V)
Figure 13. Collector-Base
Capacitance vs. Collector-Base
Voltage (DC Test).
SPICE Model Parameters
Die Model
CPad
CPad
B
C
CPad
Die Area = 0.67
CPad = 0.36 pF
E1
E2
Label
BF
IKF
ISE
NE
VAF
NF
TF
XTF
VTF
ITF
PTF
XTB
BR
IKR
ISC
NC
VAR
Value
280
299.9
9.9E-11
2.399
33.16
0.9935
1.6E-11
0.006656
0.02785
0.001
23
0
54.61
81
8.7E-13
1.587
1.511
Label
NR
TR
EG
IS
XTI
CJC
VJC
MJC
XCJC
FC
CJE
VJE
MJE
RB
RE
RC
Value
0.9886
1E-9
1.11
3.598E-15
3
1.02 pF
0.4276
0.2508
0.001
0.999
0.98 pF
0.811
0.596
5.435
1.30
0.01
Packaged Model
Cbc
L1
B
Cbe
Lb B
E1
Le
C L3
C
E2
Cce
L2
E
Label Value
Cbe 0.032 pF
Cbc 0.036 pF
Cce 0.122 pF
L1 0.46 nH
L2 0.46 nH
L3 0.46 nH
Lb 0.47 nH
Le 0.14 nH
4-93

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