PDF HUF75309P3 Data sheet ( Hoja de datos )

Número de pieza	HUF75309P3
Descripción	19A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFETs
Fabricantes	Intersil Corporation
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No Preview Available ! HUF75309P3, HUF75309D3, HUF75309D3S Data Sheet June 1999 File Number 4358.5 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efﬁciency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75309. Ordering Information PART NUMBER PACKAGE BRAND HUF75309P3 TO-220AB 75309P HUF75309D3 TO-251AA 75309D HUF75309D3S TO-252AA 75309D NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUF75309D3ST. Packaging JEDEC STYLE TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE Features • 19A, 55V • Simulation Models - Temperature Compensated PSPICE® and SABER© Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.semi.Intersil.com/families/models.htm • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-252AA GATE SOURCE DRAIN (FLANGE) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation. SABER© is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207 \| Copyright © Intersil Corporation 1999 1 page HUF75309P3, HUF75309D3, HUF75309D3S Typical Performance Curves (Continued) 2.5 PULSE DURATION = 80µs, VGS = 10V, ID = 19A DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 0.5 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.2 VGS = VDS, ID = 250µA 1.0 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 1.2 ID = 250µA 1.1 500 VGS = 0V, f = 1MHz CISS = CGS + CGD 400 CISS CRSS = CGD COSS ≈ CDS + CGD 300 1.0 0.9 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 10 VDD = 30V 8 200 100 0 0 COSS CRSS 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 6 4 WAVEFORMS IN DESCENDING ORDER: ID = 19A 2 ID = 15A ID = 10A ID = 5A 0 0 3 6 9 12 Qg, GATE CHARGE (nC) NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT 5 5 Page

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