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PDF HUF75329D3S Data sheet ( Hoja de datos )
| Número de pieza | HUF75329D3S | |
| Descripción | N-Channel UltraFET Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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Data Sheet
HUF75329D3S
October 2013
N-Channel UltraFET Power MOSFET
55 V, 20 A, 26 mΩ
These N-Channel power MOSFETs are manufactured
using the innovative UltraFET process. This advanced
process technology achieves the lowest possible on-
resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very
low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA75329.
Ordering Information
PART NUMBER
HUF75329D3ST
PACKAGE
TO-252AA
BRAND
75329D
Features
• 20A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75329D3S Rev. C0
1 page  
HUF75329D3S
Typical Performance Curves (Continued)
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 20A
2.0
1.2
1.0
VGS = VDS, ID = 250µA
1.5 0.8
1.0 0.6
0.5
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.2
ID = 250µA
1.1
1.0
0.9
0.8
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
1500
1200
900
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
600
300
0
0
COSS
CRSS
10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2 ID = 20A
ID = 12.5A
VDD = 30V
ID = 5A
0
0 5 10 15 20 25 30 35
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
©2001 Fairchild Semiconductor Corporation
HUF75329D3S Rev. C0
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HUF75329D3S.PDF ] | |
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