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Número de pieza | HUFA75545S3S | |
Descripción | 75A/ 80V/ 0.010 Ohm/ N-Channel/ UltraFET Power MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! Data Sheet
HUFA75545P3, HUFA75545S3S
December 2001
75A, 80V, 0.010 Ohm, N-Channel,
UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUFA75545P3
GATE
SOURCE
HUFA75545S3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.010Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchild.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75545P3
TO-220AB
75545P
HUFA75545S3S
TO-263AB
75545S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75545S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUFA75545P3, HUFA75545S3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TC
(TC
=
=
12050oCoC, V, VGGSS==1100VV) )(F(Figiguurere22) )
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
80
80
±20
75
73
Figure 4
Figure 6
V
V
V
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 150oC.
270
1.8
-55 to 175
300
260
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75545P3, HUFA75545S3S Rev. B
1 page HUFA75545P3, HUFA75545S3S
Typical Performance Curves (Continued)
1.2
ID = 250µA
1.1
10000
1.0 1000
CISS = CGS + CGD
COSS ≅ CDS + CGD
0.9
0.8
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
CRSS = CGD
VGS = 0V, f = 1MHz
100
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
80
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
VDD = 40V
8
6
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 75A
ID = 35A
0
0 30 60 90 120
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
©2001 Fairchild Semiconductor Corporation
HUFA75545P3, HUFA75545S3S Rev. B
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet HUFA75545S3S.PDF ] |
Número de pieza | Descripción | Fabricantes |
HUFA75545S3S | 75A/ 80V/ 0.010 Ohm/ N-Channel/ UltraFET Power MOSFET | Fairchild Semiconductor |
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