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Número de pieza | HS-306RH883S | |
Descripción | Radiation Hardened CMOS Analog Switches | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
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HS-302RH/883S, HS-303RH/883S,
HS-306RH/883S, HS-307RH/883S,
HS-384RH/883S, HS-390RH/883S
Radiation Hardened
CMOS Analog Switches
Features
Description
• This Circuit is Processed in Accordance to Mil-Std-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Radiation Hardened
- Functional Total Dose Exceeds 1 x 105 RAD Si
• Pin for Pin Compatible with Intersil HI-3XX Series
Analog Switches
• Analog Signal Range 15V
• Low Leakage
• Low RON
• No Latch Up
• Versions for 5V and 15V Digital Systems
• Low Operating Power
• Military Temperature Range -55oC to +125oC
Applications
• Sample and Hold i.e. Low Leakage Switching
• Op Amp Gain Switching i.e. Low ON Resistance
• Switched Capacitor Filters
• Low Level Switching Circuits
• Satellites
• Nuclear Reactor Controls
• Military Environments
The HS-3XXRH/883S family of analog switches are
monolithic devices fabricated using Radiation Hardened
CMOS technology and the Intersil dielectric isolation pro-
cess for latch-up free operation. Improved total dose hard-
ness is obtained by layout (thin oxide tabs extending to a
channel stop) and processing (hardened gate oxide). These
switches offer low-resistance switching performance for ana-
log voltages up to the supply rails. “ON” resistance is low
and stays reasonably constant over the full range of operat-
ing voltage and current. “ON” resistance also stays reason-
ably constant when exposed to radiation, being typically 30Ω
pre-rad and 35Ω post 100K RAD-Si. All devices provide
break-before-make switching.
The 6 devices in this switch series are differentiated by type
of switch action, pinout and digital logic levels. The HS-302/
303/384/390RH/883S switches have 5V digital inputs while
the HS-306/307RH/883S switches have 15V digital inputs.
All devices are available in Ceramic Flatpack and SBDIP
packages. The HS-3XXRH/883S switches can directly
replace the HI-3XX series devices.
Functional Diagram
IN N P
D
Ordering Information
PART NUMBER
HS1-302RH/883S
HS9-302RH/883S
HS1-302RH/Sample
HS9-302RH/Sample
HS1-303RH/883S
HS9-303RH/883S
HS1-303RH/Sample
HS9-303RH/Sample
HS1-306RH/883S ( Note 1)
HS9-306RH/883S ( Note 1)
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
-55oC to +125oC
-55oC to +125oC
SCREENING LEVEL
PACKAGE
Intersil /883 Class S Equivalent 14 Lead SBDIP
Intersil /883 Class S Equivalent 14 Lead Ceramic Flatpack
Sample
14 Lead SBDIP
Sample
14 Lead Ceramic Flatpack
Intersil /883 Class S Equivalent 14 Lead SBDIP
Intersil /883 Class S Equivalent 14 Lead Ceramic Flatpack
Sample
14 Lead SBDIP
Sample
14 Lead Ceramic Flatpack
Intersil /883 Class S Equivalent 14 Lead SBDIP
Intersil /883 Class S Equivalent 14 Lead Ceramic Flatpack
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 1
Spec Number 518526
File Number 3067.1
1 page Specifications HS-3XXRH/883S
TABLE 1. HS-302RH/303RH/384RH/390RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V (Continued)
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUB-
GROUPS
TEMPERATURE
LIMITS
MIN MAX UNITS
Positive Supply Current I(+) All Channels VA = 0.8V
1
+25oC
- 10 µA
2, 3
-55oC to +125oC
- 100 µA
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
1
2, 3
+25oC
-55oC to +125oC
- 0.5 mA
- 1 mA
Negative Supply
Current
I(-) All Channels VA = 0.8V
1
+25oC
-10 -
µA
2, 3
-55oC to +125oC
-100
-
µA
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
1
2, 3
+25oC
-55oC to +125oC
-10
-100
-
-
µA
µA
TABLE 1. HS-306RH/307RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUB-
GROUPS
TEMPERATURE
LIMITS
MIN MAX UNITS
“Switch On” Resistance
+RDS
VD = 10V, IS = -10mA,
S1/S2/S3/S4
+RDS
VD = -10V, IS = 10mA,
S1/S2/S3/S4
1
+25oC
- 50 Ω
2, 3
-55oC to +125oC
- 75
Ω
1
+25oC
- 50 Ω
2, 3
-55oC to +125oC
- 75
Ω
Leakage Current Into
the Source Terminal of
an “Off” Switch
+IS(OFF) VS = +14V, VD = -14V,
S1/S2/S3/S4
-IS(OFF) VS = -14V, VD = +14V,
S1/S2/S3/S4
1
+25oC
-2 2
nA
2, 3
-55oC to +125oC
-100 100
nA
1
+25oC
-2 2
nA
2, 3
-55oC to +125oC
-100 100
nA
Leakage Current into
the Drain Terminal of an
“Off” Switch
+ID(OFF) VS = -14V, VD = +14V,
S1/S2/S3/S4
-ID(OFF) VS = +14V, VD = -14V,
S1/S2/S3/S4
1
+25oC
-2 2
nA
2, 3
-55oC to +125oC
-100 100
nA
1
+25oC
-2 2
nA
2, 3
-55oC to +125oC
-100 100
nA
Leakage Current from
an “On” Driver Into the
Switch (Drain and
Source)
+ID(ON) VS = VD = +14V,
S1/S2/S3/S4
-ID(ON)
VS = VD = -14V,
S1/S2/S3/S4
1
+25oC
-2 2
nA
2, 3
-55oC to +125oC
-100 100
nA
1
+25oC
-2 2
nA
2, 3
-55oC to +125oC
-100 100
nA
Low Level Input
Address Current
High Level Input
Address Current
IAL All Channels VA = 3.5V
IAH All Channels VA = 11V
1
+25oC
-1 1
µA
1, 2
-55oC to +125oC -1 1
µA
1
+25oC
-1 1
µA
1, 2
-55oC to +125oC -1 1
µA
Spec Number 518526
5
5 Page HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
Intersil Space Level Product Flow
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Nondestructive Bond Pull, Method 2023
Sample - Wire Bond Pull Monitor, Method 2011
Sample - Die Shear Monitor, Method 2019 or 2027
100% Internal Visual Inspection, Method 2010, Condition A
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% PIND, Method 2020, Condition A
100% External Visual
100% Serialization
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 72hrs. min.,
+125oC min.
100% Interim Electrical Test (T1)
100% Delta Calculation (T0-T1)
100% PDA, Method 5004 (Note 1)
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
Equivalent, Method 1015
100% Interim Electrical Test (T2)
100% Delta Calculation (T0-T2)
100% PDA, Method 5004 (Note 1)
100% Final Electrical Test
100% Fine/Gross Leak, Method 1014
100% Radiographic, Method 2012 (Note 2)
100% External Visual, Method 2009
Sample - Group A, Method 5005 (Note 3)
Sample - Group B, Method 5005
Sample - Group D, Method 5005
100% Data Package Generation (Note 4)
NOTES:
1. Failures from subgroup 1, 7 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
2. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
3. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
4. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quan-
tity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. (See Table 6)
• Group B and D attributes and/or Generic data.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
Spec Number 518526
11
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet HS-306RH883S.PDF ] |
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