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PDF HS-3530RH Data sheet ( Hoja de datos )

Número de pieza HS-3530RH
Descripción Low Power/ Radiation Hardened Programmable Operational Amplifier
Fabricantes Intersil Corporation　
Logotipo Intersil Corporation Logotipo



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No Preview Available ! HS-3530RH Hoja de datos, Descripción, Manual

HS-3530RH
August 1995
Low Power, Radiation Hardened
Programmable Operational Amplifier
Features
Pinout
• Radiation Environment
- Neutron Fluence (Φ) 5 x 1012 n/cm2 (E ≥ 10KeV)
- Gamma Rate (γ) 1 x 109 RAD (Si)/s
- Gamma Dose (γ) 1 x 106 RAD (Si)
• Wide Range AC Programming
- Slew Rate 0.06 to 3V/µs
- Gain X Bandwidth 100kHz to 5.0MHz
• Wide Range DC Programming
- Power Supply Range ±3.0V to ±15V
• Supply Current 10µA to 1.2mA
• Dielectrically Isolated Device Islands
8 LEAD METAL CAN PACKAGE (CAN)
MIL-STD-1835 MACY1-X8
TOP VIEW
OFFSET
NULL
1
INVERTING
INPUT
2
ISET
8
7 V+
6 OUTPUT
NON-INVERTING 3
5 OFFSET
INPUT
4
NULL
V-
• Short Circuit Protection
Description
NOTE:
1. Case tied to V-.
The HS-3530RH is a Low Power Operational Amplifier which
is an internally compensated monolithic device offering a
wide range of performance specifications. Parameters such
as power dissipation, slew rate, bandwidth, noise and input
DC parameters are programmed by selecting an external
resistor or current source. Supply voltages as low as ±3V
may be used with little degradation of AC performance. The
HS-3530RH has been specifically designed to meet
exposure to space radiation environments. Operation from -55oC
to +125oC is guaranteed.
A major advantage of the HS-3530RH is that operating
characteristics remain virtually constant over a wide supply
range (±3V to ±15V), allowing the amplifier to offer maximum
performance in almost any system, including battery
operated equipment. A primary application for this device is
in active filtering and conditioning for a wide variety of
signals that differ in frequency and amplitude. Also, by
modulating the set current, it can be used for designs such
as current controlled oscillators/modulators, sample and
hold circuits and variable active filters.
Functional Diagram
+V
OFFSET
NULL 2
7
2
-IN
+IN 3
5
6
8
1
4
ISET
OUT
-V OFFSET
NULL 1
Ordering Information
PART NUMBER
HS2-3530RH-8
HS2-3530RH-Q
HS2-3530RH/SAMPLE
TEMPERATURE
RANGE
PACKAGE
-55oC to +125oC 8 Lead Metal Can
-55oC to +125oC 8 Lead Metal Can
+25oC
8 Lead Metal Can
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
762
Spec Number 518079
File Number 3024.2

1 page




HS-3530RH pdf
Specifications HS-3530RH
TABLE 4. POST RAD DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Open Loop Voltage Gain
Input Offset Voltage
SYMBOL
AVOL
VIO
CONDITIONS
VSUPPLY = ±15V
ISET = 15µA
VSUPPLY = ±15V
ISET = 15µA
TEMPERATURE
+25oC
+25oC
MIN
15
-
MAX
-
5.0
UNITS
kV/V
mV
TABLE 5. BURN-IN DELTA PARAMETERS GROUP B, SUBGROUPS 5 (TA = +25oC)
PARAMETER
DELTA LIMIT
VIO ±0.5mV
IBIAS
±30nA
TABLE 6. APPLICABLE SUBGROUPS
GROUP A SUBGROUPS
CONFORMANCE
GROUP
MIL-STD-883
METHOD
TESTED FOR -Q
RECORDED
FOR -Q
TESTED FOR -8
Initial Test
100% 5004
1, 4, 9
1 (Note 2)
1, 4, 9
Interim Test
100% 5004
1, 4, 9, ∆
1, ∆ (Note 2)
1, 4, 9
PDA
100% 5004
1, ∆
-1
Final Test
100% 5004
2, 3, 5, 6
- 2, 3, 5, 6
Group A (Note 1)
Sample 5005
1, 2, 3, 4, 5, 6, 9
- 1, 2, 3, 4, 5, 6, 9
Subgroup B5
Sample 5005
1, 2, 3, 4, 5, 6, 9, ∆
1, 2, 3, ∆ (Note 2)
-
Subgroup B6
Sample 5005
1, 4, 9
--
Group C
Sample 5005
-
- 1, 2, 3, 4, 5, 6, 9
Group D
Sample 5005
1, 4, 9
- 1, 4, 9
Group E, Subgroup 2
Sample 5005
1
-1
NOTES:
1. Alternate Group A testing in accordance with MIL-STD-883 method 5005 may be exercised.
2. Table 5 parameters only
RECORDED
FOR -8
Spec Number 518079
766

5 Page





HS-3530RH arduino
Metallization Topology
DIE DIMENSIONS:
54 x 67 x 11.5mils
(1370 x 1700 x 290µm)
METALLIZATION:
Type: Al
Thickness: 12.5kÅ ± 2kÅ
GLASSIVATION:
Type: SiO2
Thickness: 8kÅ ± 1kÅ
Metallization Mask Layout
+IN
HS-3530RH
DIE ATTACH:
Temperature: Metal Can - 420oC (Max)
WORST CASE CURRENT DENSITY:
0.544 x 105 A/cm2 at 2.5mA
SUBSTRATE POTENTIAL (POWERED UP): -V
TRANSISTOR COUNT: 49
PROCESS: Complimentary Bipolar
HS-3530RH
OFFSET
-IN NULL
-V
(& PACKAGE)
OFFSET NULL
OUTPUT
ISET
+V
Spec Number 518079
772

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