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Número de pieza HN1K06FU
Descripción TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K06FU
HN1K06FU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
· High input impedance and extremely low drive current.
· Vth is low and it is possible to drive directly at low-voltage CMOS.
: Vth = 0.5 to 1.5 V
· Switching speed is fast.
· Suitable for high-density mounting because of a compact package
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: TOTAL rating
Symbol
VDS
VGSS
ID
PD (Note)
Tch
Tstg
Rating
20
10
100
200
150
-55 to 150
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
JEDEC
JEITA
TOSHIBA
Weight: 6.8 mg
2-2J1C
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Symbol
Test Condition
IGSS
V (BR) DSS
IDSS
Vth
ïYfsï
RDS (ON)
Ciss
Crss
Coss
ton
toff
VGS = 10 V, VDS = 0 V
ID = 100 mA, VGS = 0 V
VDS = 20 V, VGS = 0 V
VDS = 3 V, ID = 0.1 mA
VDS = 3 V, ID = 10 mA
ID = 10 mA, VGS = 2.5 V
VDS = 3 V, VGS=0 V, f = 1 MHz
VDS = 3 V, VGS=0 V, f = 1 MHz
VDS = 3 V, VGS=0 V, f = 1 MHz
VDD = 3 V, ID = 10 mA,
VGS = 0 to 2.5 V
VDD = 3 V, ID = 10 mA,
VGS = 0 to 2.5 V
Min Typ. Max Unit
¾ ¾ 1 mA
20 ¾ ¾ V
¾ ¾ 1 mA
0.5 ¾ 1.5 V
35 62 ¾ mS
¾ 3.5 6.0 W
¾ 14 ¾ pF
¾ 5.3 ¾ pF
¾ 16 ¾ pF
¾ 0.28 ¾
¾ 0.34 ¾
ms
1 2002-01-16

1 page




HN1K06FU pdf
HN1K06FU
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5 2002-01-16

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