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Numéro de référence | HN29W12811 | ||
Description | 128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) | ||
Fabricant | Hitachi Semiconductor | ||
Logo | |||
HN29W12811 Series
128M AND type Flash Memory
More than 8,029-sector (135,657,984-bit)
ADE-203-1183C (Z)
Rev. 2.0
Feb. 7, 2001
Description
The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has
fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29W12811 are more than 8,029 (98% of all
sector address).
Features
• On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
• Organization
AND Flash Memory: (2048 + 64) bytes × (More than 8,029 sectors)
Data register: (2048 + 64) bytes
• Multi-level memory cell
2 bit/per memory cell
• Automatic programming
Sector program time: 2.5 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
• Automatic erase
Single sector erase time: 1.0 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
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Pages | Pages 30 | ||
Télécharger | [ HN29W12811 ] |
No | Description détaillée | Fabricant |
HN29W12811 | 128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) | Hitachi Semiconductor |
HN29W12811T-60 | 128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) | Hitachi Semiconductor |
HN29W12814A | 128M and Type Flash Memory More than 16057 Sector X 2 | Hitachi |
HN29W12814ATT-50 | 128M and Type Flash Memory More than 16057 Sector X 2 | Hitachi |
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