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Numéro de référence | BAT15-099R | ||
Description | Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators) | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
1 Page
Silicon Crossover Ring Quad Schottky Diode
q Low barrier diode for double balanced mixers,
phase detectors and modulators
BAT 15-099R
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code
(tape and reel)
BAT 15-099R S6
Q62702-A0043
Pin Configuration
Package1)
SOT-143
Maximum Ratings per Diode
Parameter
Forward current
Power dissipation, TS ≤ 70 ˚C
Storage temperature range
Operating temperature range
Thermal Resistance per Diode
Junction – ambient2)
Junction – soldering point
Symbol
IF
Ptot
Tstg
Top
Values
Unit
110 mA
100 mW
– 55 … + 150 ˚C
– 55 … + 150
Rth JA
Rth JS
≤ 1020
≤ 780
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm.
Semiconductor Group
1
02.96
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Pages | Pages 2 | ||
Télécharger | [ BAT15-099R ] |
No | Description détaillée | Fabricant |
BAT15-099 | Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type) | Siemens Semiconductor Group |
BAT15-099 | Silicon Schottky Diodes | Infineon Technologies AG |
BAT15-099R | Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators) | Siemens Semiconductor Group |
BAT15-099R | Silicon Schottky Diodes | Infineon Technologies AG |
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