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AT29BV020-35JC fiches techniques PDF

ATMEL Corporation - 2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory

Numéro de référence AT29BV020-35JC
Description 2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
Fabricant ATMEL Corporation 
Logo ATMEL Corporation 





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AT29BV020-35JC fiche technique
AT29BV020
Features
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Software Protected Programming
Fast Read Access Time - 250 ns
•• Low Power Dissipation
15 mA Active Current
20 µA CMOS Standby Current
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (256 bytes/sector)
Internal Address and Data Latches for 256-Bytes
Two 8 KB Boot Blocks with Lockout
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
•• Commercial and Industrial Temperature Ranges
Description
The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times up to 250 ns, and a low 54 mW power dissipation.
When the device is deselected, the CMOS standby current is less than 20 µA. The
device endurance is such that any sector can typically be written to in excess of
10,000 times. The programming algorithm is compatible with other devices in Atmel’s
Low Voltage Flash family of products.
(continued)
Pin Configurations
Pin Name
A0 - A17
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
2 Megabit
(256K x 8)
Single 2.7-volt
Battery-Voltage
CMOS Flash
Memory
AT29BV020
TSOP Top View
Type 1
PLCC Top View
0402B
4-13

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