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Número de pieza | D1019 | |
Descripción | METAL GATE RF SILICON FET | |
Fabricantes | Seme LAB | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de D1019 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! MECHANICAL DATA
C
12
4
A
3
B
D
PIN 1
PIN 3
DRAIN
GATE
PIN 2
PIN 4
SOURCE
SOURCE
DIM mm
A 26.16
B 5.72
C 45°
D 7.11
E 0.13
F 1.52
G 0.43
H 7.67
Tol.
0.13
0.13
5°
0.13
0.02
0.13
0.20
REF
Inches
1.030
0.225
45°
0.280
0.005
0.55
0.060
0.120
Tol.
0.015
0.005
5°
0.005
0.001
0.005
0.008
REF
TetraFET
D1019UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
50W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
5A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
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1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet D1019.PDF ] |
Número de pieza | Descripción | Fabricantes |
D1010ADT | Trench MOS Barrier Schottky Rectifier | NIKO-SEM |
D1010UK | METAL GATE RF SILICON FET | Seme LAB |
D1011 | METAL GATE RF SILICON FET | Seme LAB |
D1011UK | METAL GATE RF SILICON FET | Seme LAB |
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